Results 11 to 20 of about 1,753 (147)

Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal

Advanced Materials, 2022
AbstractRealizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a
Mengying Bian, Liang Zhu, Xiao Wang, Junho Choi, Rajesh V. Chopdekar, Sichen Wei, Lishu Wu, Chang Huai, Austin Marga, Qishuo Yang, Yuguang C. Li, Fei Yao, Ting Yu, Scott A. Crooker, Xuemei M. Cheng, Renat F. Sabirianov, Shengbai Zhang, Junhao Lin, Yanglong Hou, Hao Zeng   +19 more
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Ultrathin Single‐Crystalline CdTe Nanosheets Realized via Van der Waals Epitaxy [PDF]

Advanced Materials, 2017
Due to the novel physical properties, high flexibility, and strong compatibility with Si‐based electronic techniques, 2D nonlayered structures have become one of the hottest topics. However, the realization of 2D structures from nonlayered crystals is still a critical challenge, which requires breaking the bulk crystal symmetry and guaranteeing the ...
Cheng R., Wen Y., Yin L., Wang F., Wang F., Liu K., Shifa T. A., Li J., Jiang C., Wang Z., He J.   +10 more
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Van der Waals Epitaxy of Bismuth‐Based Multiferroic Layered Supercell Oxide Thin Films Integrated on Flexible Mica Substrate [PDF]

Small Science
Bi2NiMnO6 (BNMO) epitaxial thin films with a layered supercell (LSC) structure have emerged as a promising single‐phase multiferroic material recently.
Jianan Shen, Benson Kunhung Tsai, Yizhi Zhang, Ke Xu, James P. Barnard, Zedong Hu, Xinghang Zhang, Haiyan Wang   +7 more
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Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration [PDF]

Advanced Science
The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct
Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei   +14 more
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Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate [PDF]

Advanced Science
Gallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline ...
Tong Jiang, Hao Wang, Huaze Zhu, Junwei Cao, Xiaoqing Huo, Zhiqing Yang, Junshuai Li, Yaqing Ma, Shengnan Zhang, Xiang Xu, Wei Kong   +10 more
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Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures [PDF]

Advanced Materials, 2021
AbstractUnderstanding the growth mechanisms of 2D van der Waals (vdW) heterostructures is of great importance in exploring their functionalities and device applications. A custom‐built system integrating physical vapor deposition and optical microscopy/Raman spectroscopy is employed to study the dynamic growth processes of 2D vdW heterostructures in ...
Kenan Zhang, Changchun Ding, Baojun Pan, Zhen Wu, Austin Marga, Lijie Zhang, Hao Zeng, Shaoming Huang   +7 more
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Microstructure control and property switching in stress-free van der Waals epitaxial VO2 films on mica

Materials & Design, 2023
Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy.
Erik Ekström, Simon Hurand, Arnaud le Febvrier, Anna Elsukova, Per O.Å. Persson, Biplab Paul, Fredrik Eriksson, Geetu Sharma, Oleksandr Voznyy, Davide G. Sangiovanni, Ganpati Ramanath, Per Eklund   +11 more
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Controlled van der Waals epitaxy of 2D single-crystal molecular film. [PDF]

Natl Sci Rev
Liu X, Lee YH.
europepmc   +3 more sources

Lattice modulation strategies for 2D material assisted epitaxial growth

Nano Convergence, 2023
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel ...
Qi Chen, Kailai Yang, Meng Liang, Junjie Kang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu   +7 more
doaj   +1 more source

Orientational Epitaxy of van der Waals Molecular Heterostructures [PDF]

Nano Letters, 2018
The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom.
Lu’an Guo, Yitao Wang, Dogan Kaya, Richard E Palmer, Guangde Chen, Quanmin Guo   +5 more
openaire   +4 more sources