Results 31 to 40 of about 1,753 (147)

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Materials Research Express, 2020
The crystalline quality of traditional epitaxy is hampered by the lattice and thermal mismatch of epilayer and substrate. Van der Waals epitaxy (vdWE) allows the epilayer to show no excessive strain and results in low defects density.
Xianjie Xiong, Yu Xu, Shunan Zheng, Tong Liu, Xujun Su, Bing Cao, Chinhua Wang, Ke Xu   +7 more
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Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Nature Communications, 2016
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih   +6 more
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Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2

npj 2D Materials and Applications, 2022
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers.
Mário Ribeiro, Giulio Gentile, Alain Marty, Djordje Dosenovic, Hanako Okuno, Céline Vergnaud, Jean-François Jacquot, Denis Jalabert, Danilo Longo, Philippe Ohresser, Ali Hallal, Mairbek Chshiev, Olivier Boulle, Frédéric Bonell, Matthieu Jamet   +14 more
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GaN-Based LEDs Grown on Graphene-Covered SiO₂/Si (100) Substrate

Crystals, 2020
The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices.
Wurui Song, Fang Ren, Yunyu Wang, Yue Yin, Shuo Zhang, Bo Shi, Tao Feng, Jianwei Wang, Meng Liang, Yiyun Zhang, Tongbo Wei, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaoyan Yi, Zhiqiang Liu   +15 more
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Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Scientific Reports, 2017
The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with
Eugenio Zallo, Stefano Cecchi, Jos E. Boschker, Antonio M. Mio, Fabrizio Arciprete, Stefania Privitera, Raffaella Calarco   +6 more
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Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS₂ Layer

Nanomaterials, 2021
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp2-bonded two-dimensional (2D) MoS2 buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully
Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu   +4 more
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Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures [PDF]

Scientific Reports, 2016
AbstractTwo-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding ...
Pierucci, Debora, Henck, Hugo, Naylor, Carl H., Sediri, Haikel, Lhuillier, Emmanuel, Balan, Adrian, Rault, Julien E., Dappe, Yannick J., Bertran, François, Le Fèvre, Patrick, Johnson, A.T. Charlie, Ouerghi, Abdelkarim   +11 more
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Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

Applied Sciences, 2020
Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging.
Minghui Gu, Chen Li, Yuanfeng Ding, Kedong Zhang, Shunji Xia, Yusheng Wang, Ming-Hui Lu, Hong Lu, Yan-Feng Chen   +8 more
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Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN [PDF]

NPG Asia Materials, 2014
Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape- and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating ...
Oh, Hongseok, Hong, Young Joon, Kim, Kun-Su, Yoon, Sangmoon, Baek, Hyeonjun, Kang, Seoung-Hun, Kwon, Young-Kyun, Kim, Miyoung, Yi, Gyu-Chul   +8 more
openaire   +2 more sources

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Nature Communications, 2017
Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al.
Tiefeng Yang, Biyuan Zheng, Zhen Wang, Tao Xu, Chen Pan, Juan Zou, Xuehong Zhang, Zhaoyang Qi, Hongjun Liu, Yexin Feng, Weida Hu, Feng Miao, Litao Sun, Xiangfeng Duan, Anlian Pan   +14 more
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