Results 41 to 50 of about 1,753 (147)

Atomic‐Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires

Advanced Materials Interfaces, 2023
The sub‐nanometer‐diameter transitional‐metal chalcogenides (M6X6) molecular wires are ideal 1D quantum systems. The electronic properties of such system are very sensitive to the interface interaction and local imperfection.
Yuang Li, Di Wu, Dongli Wang, Yinuo Zhang, Tai Min, Yi Pan   +5 more
doaj   +1 more source

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Scientific Reports, 2020
Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer.
Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +14 more
doaj   +1 more source

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics

Advanced Materials Interfaces, 2023
Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan, Zekai Zhang, Renjie Gu, Shuo Ma, Lorenzo Faraone, Wen Lei   +5 more
doaj   +1 more source

Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Frontiers in Physics, 2022
In electronics, the size of transistors has been reduced to a few nanometers. Electronic devices’ accuracy and authenticity face a major problem of leakage current.
Sadhak Khanna, Sadhak Khanna, Sadhak Khanna   +2 more
doaj   +1 more source

Epitaxial 2D SnSe₂/ 2D WSe₂ van der Waals Heterostructures

ACS Applied Materials & Interfaces, 2016
van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence
Kleopatra Emmanouil Aretouli, Dimitra Tsoutsou, Polychronis Tsipas, Jose Marquez-Velasco, Sigiava Aminalragia Giamini, Nicolaos Kelaidis, Vassilis Psycharis, Athanasios Dimoulas   +7 more
openaire   +3 more sources

Resolving few-layer antimonene/graphene heterostructures

npj 2D Materials and Applications, 2021
Two-dimensional (2D) antimony (Sb, “antimonene”) is of interest in electronics and batteries. Sb however exhibits a large allotropic structural diversity, which is also influenced by its support.
Tushar Gupta, Kenan Elibol, Stefan Hummel, Michael Stöger-Pollach, Clemens Mangler, Gerlinde Habler, Jannik C. Meyer, Dominik Eder, Bernhard C. Bayer   +8 more
doaj   +1 more source

Atomically constructing a van der Waals heterostructure of CrTe2/Bi2Te3 by molecular beam epitaxy

Materials Futures, 2023
A 2D heterostructure with proximity coupling of magnetism and topology can provide enthralling prospects for hosting new quantum states and exotic properties that are relevant to next-generation spintronic devices.
Jin-Hua Nie, Rui Li, Mao-Peng Miao, Ying-Shuang Fu, Wenhao Zhang   +4 more
doaj   +1 more source

Direct Growth of van der Waals Tin Diiodide Monolayers

Advanced Science, 2021
Two‐dimensional (2D) van der Waals (vdW) materials have garnered considerable attention for their unique properties and potentials in a wide range of fields, which include nano‐electronics/optoelectronics, solar energy, and catalysis.
Qian‐Qian Yuan, Fawei Zheng, Zhi‐Qiang Shi, Qi‐Yuan Li, Yang‐Yang Lv, Yanbin Chen, Ping Zhang, Shao‐Chun Li   +7 more
doaj   +1 more source

Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

APL Materials, 2017
An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application.
Isom Hilmi, Andriy Lotnyk, Jürgen W. Gerlach, Philipp Schumacher, Bernd Rauschenbach   +4 more
doaj   +1 more source

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

APL Materials, 2017
Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of
Stefano Cecchi, Eugenio Zallo, Jamo Momand, Ruining Wang, Bart J. Kooi, Marcel A. Verheijen, Raffaella Calarco   +6 more
doaj   +1 more source