Results 61 to 70 of about 1,753 (147)

Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate. [PDF]

Sci Rep, 2023
Wu CH, Chou C, Lin HH.
europepmc   +1 more source

Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

New Journal of Physics, 2015
Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics.
L Jiao, H J Liu, J L Chen, Y Yi, W G Chen, Y Cai, J N Wang, X Q Dai, N Wang, W K Ho, M H Xie   +10 more
doaj   +1 more source

Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS₂ on Sapphire. [PDF]

ACS Nano, 2023
Cohen A, Mohapatra PK, Hettler S, Patsha A, Narayanachari KVLV, Shekhter P, Cavin J, Rondinelli JM, Bedzyk M, Dieguez O, Arenal R, Ismach A.   +11 more
europepmc   +1 more source

Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials

APL Materials
Two-dimensional transition metal chalcogenides, with their atomically layered structure, favorable electronic and mechanical properties, and often strong spin–orbit coupling, are ideal systems for fundamental studies and for applications ranging from ...
A. Rajan, M. Ramirez, N. Kushwaha, S. Buchberger, S. Mo, B. Saika, M. McLaren, P. D. C. King   +7 more
doaj   +1 more source

Growth, structure, and morphology of van der Waals epitaxy Cr_1+δTe₂ films. [PDF]

Discov Nano, 2023
Wang X, Zhou H, Bai L, Wang HQ.
europepmc   +1 more source

Facilitating Uniform Large-Scale MoS₂, WS₂ Monolayers, and Their Heterostructures through van der Waals Epitaxy. [PDF]

ACS Appl Mater Interfaces, 2022
Huang CC, Wang H, Cao Y, Weatherby E, Richheimer F, Wood S, Jiang S, Wei D, Dong Y, Lu X, Wang P, Polcar T, Hewak DW.   +12 more
europepmc   +1 more source

Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy. [PDF]

Sci Rep, 2022
Chou C, Wu BX, Lin HH.
europepmc   +1 more source

Exploring Metal‐Organic Molecular Beam Epitaxy as an Alternative Pathway towards 2D Transition Metal Dichalcogenides WSe2 and WS2

Small Structures
A new approach for the growth of vertical 2D van‐der‐Waals heterostructures is reported: Using metal‐organic molecular beam epitaxy (MOMBE), aspects of chemical and physical vapor deposition are combined to grow ultrathin films of WX2 (X = Se, S) on ...
Adrian Schütze, Philip Schädlich, Thomas Seyller, Fabian Göhler   +3 more
doaj   +1 more source

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. [PDF]

Sci Adv, 2021
Ren F, Liu B, Chen Z, Yin Y, Sun J, Zhang S, Jiang B, Liu B, Liu Z, Wang J, Liang M, Yuan G, Yan J, Wei T, Yi X, Wang J, Zhang Y, Li J, Gao P, Gao P, Liu Z, Liu Z.   +21 more
europepmc   +1 more source

Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates

Advanced Science
Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates.
Chang‐Hsun Huang, Chia‐Yi Wu, Yi‐Chia Chou   +2 more
doaj   +1 more source