Results 71 to 80 of about 1,753 (147)

Toward Large-Scale Ga₂O₃ Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. [PDF]

ACS Appl Mater Interfaces, 2021
Min JH, Li KH, Kim YH, Min JW, Kang CH, Kim KH, Lee JS, Lee KJ, Jeong SM, Lee DS, Bae SY, Ng TK, Ooi BS.   +12 more
europepmc   +1 more source

Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy. [PDF]

Nanoscale Adv, 2021
Baboli MA, Abrand A, Burke RA, Fedorenko A, Wilhelm TS, Polly SJ, Dubey M, Hubbard SM, Mohseni PK.   +8 more
europepmc   +1 more source

Core–Shell WS2@WTe2/MoTe2 Nanotubes

Small Structures
WTe2 and MoTe2 are materials with a layered structure (2D materials) belonging to the transition metal dichalcogenide family of compounds. Their topological 1T′ polytype has not been fabricated and studied in a 1D nanotubular structure, so far.
Vojtech Kundrat, Lothar Houben, Jakub Zalesak, David Holec, Iddo Pinkas, Reshef Tenne   +5 more
doaj   +1 more source

Van der Waals epitaxy in graphene heterostructures [PDF]

Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or
openaire  

Strain Solitons in an Epitaxially Strained van der Waals-like Material

Nano Letters
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed.
Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey, Aaron N. Engel, Christopher J. Palmstrøm   +4 more
openaire   +3 more sources

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Anisotropic Hierarchical Assembly of C60 from One Dimensional to Three Dimensional via Thiolate‐Mediated van der Waals Epitaxy

Small Structures
The anisotropic growth of C60 is essential for engineering oriented electronic properties. This growth mode, however, is challenged by the strong thermodynamic drive of molecules forming close‐packed assemblies.
Chao Yan, Yiwen Wang, Xueting Xing, Xin Zhang, Jiahui Li, Xiaorui Chen, Shu Yang, Cunxin Zhang, Rongqiang Li, Chuhan Zhang, Haosheng Tan, Wei Wang, Jiale Zhao, Jianzhi Gao, Minghu Pan, Zhibo Yang, Quanmin Guo   +16 more
doaj   +1 more source

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS₂ for scalable 2D electronics. [PDF]

Nat Commun
Sakuma Y, Atsumi K, Hiroto T, Nara J, Ohtake A, Ono Y, Matsumoto T, Muta Y, Takeda K, Kano E, Yasuno T, Yang X, Ikarashi N, Suzuki A, Ikezawa M, Li S, Nishimura T, Kanahashi K, Nagashio K.   +18 more
europepmc   +1 more source

Van der Waals Epitaxy of 2D Gallium Telluride on Graphene: Growth Dynamics and Principal Component Analysis. [PDF]

Small
Bissolo M, Hanke M, Calarco R, Finley JJ, Koblmüller G, Lopes JMJ, Zallo E.   +6 more
europepmc   +1 more source

2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors. [PDF]

Nat Commun
Yue M, Zhang K, Zhao M, Wang Y, Li D, Liang J, Zheng B, Zou C, Ye Y, Wang P, Zhang L, Wang S.   +11 more
europepmc   +1 more source