Results 131 to 140 of about 4,807,933 (188)

Investigating the Growth of GaSb Single Crystals through Optimized LEC Method Utilizing Finite Element Simulation and Machine Learning Techniques. [PDF]

ACS Omega
Han J, Xu B, Lei Y, Hui F, He Y, Wang S, Liu J, Li S, Tang K.   +8 more
europepmc   +1 more source

Virtual Frisch grid perovskite CsPbBr₃ semiconductor with 2.2-centimeter thickness for high energy resolution gamma-ray spectrometer. [PDF]

Nat Commun
Qin H, Xiao B, He X, Ouyang X, Gao T, Wang Y, Wang L, Sun Q, Shen N, Ouyang X, He Y.   +10 more
europepmc   +1 more source

Paper-based lead-free thin film X-ray detectors with high sensitivity and superior environmental stability

Zhao Q, Liu Y, Chen Y, Gong W, Li X, Zhou B, Huang H, Han N, Chen S, Zhang B, Li J, Castellanos-Gomez A, Gnatyuk V, Nan W, Wang T.   +14 more
europepmc   +1 more source

Growth and Characterization of CdMnTe by the Vertical Bridgman Technique [PDF]

Journal of Crystal Growth, 2016
Abstract We grew Cd 1− x Mn x Te crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The structural quality of the crystal was evaluated by white beam X-ray topography in the National Synchrotron Light Source (NSLS) facility at Brookhaven National Laboratory (BNL). We observed that the crystal was free from a
Rubi Gul, G S Camarda, G Gu
exaly   +2 more sources

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Convection in the vertical Bridgman-Stockbarger technique

Journal of Crystal Growth, 1988
The influence of operating parameters on convection in the Bridgman-Stockbarger technique was studied with a transparent furnace and melt. Convection was nearly nonexistent near the interface in the vertically stabilized configuration (temperature increasing with height).
Gregory T. Neugebauer, William R. Wilcox
openaire   +1 more source

Growth of CdTe crustals by the vertical bridgman technique

Journal of Crystal Growth, 1985
Abstract CdTe crystals were grown by the vertical Bridgman technique and the quality of the crystals was examined. It was found that under optimized conditions crystals with lower defect density and with higher crystal perfectness can be obtained.
O. Oda, K. Hirata, K. Matsumoto, I. Tsuboya   +3 more
openaire   +1 more source

Control of interface shape in the vertical bridgman-stockbarger technique

Journal of Crystal Growth, 1974
Abstract At very slow travel rates the solid-liquid interface shape (from the viewpoint of the solid) is convex when it lies within the heater and concave when it lies within the cooler. The dependence of interface position on travel rate, geometry of the ampoule, and on the relative temperatures of the heater and cooler increases as the ...
Chong E. Chang, William R. Wilcox
openaire   +1 more source

Low dislocation density GaAs grown by the vertical Bridgman technique

Journal of Materials Research, 1990
We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a form of vertical Bridgman (VB) growth, is capable of producing either doped (semiconducting) or undoped ...
R. E. Kremer, D. Francomano, G. H. Beckhart, K. M. Burke   +3 more
openaire   +1 more source

Electrical Characterization of SbSel Grown From the Melt by the Vertical Bridgman Technique

Journal of Materials Science Letters, 1987
P Ramasamy, F D Gnanam
exaly   +2 more sources