Results 141 to 150 of about 4,807,933 (188)

Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates

Journal of Electronic Materials, 1995
In order to improve the Zn homogeneity along the axial direction of CdZnTe boule, we have employed a modified Bridgman technique using a (Cd, Zn) alloy source in communication with the melt, whose temperature has been gradually changed from 800 to 840°C during growth. Electron probe microanalysis (EPMA) measurements of Zn composition in the boule shows
T. S. Lee, S. B. Lee, J. M. Kim, J. S. Kim, S. H. Suh, J. H. Song, I. H. Park, S. U. Kim, M. J. Park   +8 more
openaire   +1 more source

Application of eddy current technique to vertical bridgman growth of CdZnTe

Journal of Electronic Materials, 1996
The eddy current technique was used to reveal the interface shape during vertical Bridgman growth of CdZnTe and to follow changes in the properties of the solidified ingot as it was cooled to room temperature after growth. Experiments were performed where partially solidified charges were decanted to show the interface shape.
R. Shetty, C. K. Ard, J. P. Wallace
openaire   +1 more source

Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique

2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2015
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a
TURTURICI, Accursio Antonio, ABBENE, Leonardo, GERARDI, Gaetano, Benassi, G., Calestani, D., Zambelli, N., RASO, Giuseppe, Zappettini, A., PRINCIPATO, Fabio   +8 more
openaire   +3 more sources

Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

Journal of Crystal Growth, 2005
Abstract In the present work we study a vertical feeding method (VFM) for semiconductor alloy crystal growth. VFM will allow for controlling concentration and temperature of growing material. The method consists of replenishing a growing melt by continuous feeding of the growing material.
J. Vincent, V. Bermudez, E. Dieguez, L.C. Alves, V. Corregidor, N.P. Barradas   +5 more
openaire   +1 more source

Bulk growth of benzimidazole single crystals by vertical Bridgman technique (VBT)

Journal of Crystal Growth, 2004
The electro-optic and nonlinear optical crystals of benzimidazole have been successfully grown by vertical Bridgman technique by optimizing the growth conditions. The reproducibility of crystal growth has been tested and established. This is the first report for the growth of benzimidazole by melt technique.
N Vijayan, N Balamurugan, R Ramesh Babu, R Gopalakrishnan, P Ramasamy, W.T.A Harrison   +5 more
openaire   +1 more source

A microstructural and compositional analysis of CuInSe2 ingots grown by the vertical Bridgman technique

Journal of Crystal Growth, 1997
Abstract An in-depth microstructural study of CuInSe2 ingots grown by the vertical Bridgman technique has been carried out. Electron probe microanalysis (EPMA) has been used to analyse the matrix composition and second phase distribution as a function of distance along the Bridgman boule.
C.A. Mullan, C.J. Kiely, S.M. Casey, M. Imanieh, M.V. Yakushev, R.D. Tomlinson   +5 more
openaire   +1 more source

Characterization of CdMnTe Planar Nuclear Detectors Grown by Vertical Bridgman Technique

2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2019
Cadmium manganese telluride (CdMnTe) crystals are expected to be homogenous in structure due to the segregation coefficient of Mn in CdTe, which is about 1.0. This could translate in the growth of large-volume CdMnTe crystals free of defects that currently limit X-ray and gamma-ray detection efficiencies.
Stephen U. Egarievwe, Utpal N. Roy, Ezekiel O. Agbalagba, Keiandrea L. Dunning, Oghaghare K. Okobiah, Mordecai B. Israel, Mebougna L. Drabo, Ralph B. James   +7 more
openaire   +1 more source

Growth of CdMnTe Free of Large Te Inclusions Using the Vertical Bridgman Technique [PDF]

Journal of Crystal Growth, 2019
Abstract We grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge.
Rubi Gul, G S Camarda, A Hossain
exaly   +2 more sources

Radioscopic visualization of indium antimonide growth by the vertical Bridgman-Stockbarger technique

Journal of Crystal Growth, 1995
Abstract A new vertical Bridgman-Stockbarger furnace with the capability for real-time melt/crystal interface visualization is demonstrated. Radioscopic visualization requirements are considered in the furnace design. The semiconductor material indium antimonide (InSb) is melted and then solidified from below.
T.A. Campbell, J.N. Koster
openaire   +1 more source

Studies on acenaphthene (C12H10) single crystals grown by vertical Bridgman technique

Journal of Crystal Growth, 2005
Abstract Acenaphthene single crystals (with a diameter of 15 mm and length of 28 mm) were grown by Vertical Bridgman technique using double wall ampoules, at a growth rate of 1.5 mm/day. Powder X-ray diffraction studies were carried out to determine the lattice parameters for the grown crystals. The micro-Raman studies have been performed to identify
R. Ramesh Babu, N. Balamurugan, N. Vijayan, R. Gopalakrishnan, G. Bhagavannarayana, P. Ramasamy   +5 more
openaire   +1 more source