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Spectroscopic response and charge transport properties of CdZnTe detectors grown by the vertical Bridgman technique

2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2015
In this work, we present the results of spectroscopic investigations on CdZnTe (CZT) detectors grown by the boron oxide encapsulated vertical Bridgman technique (1MEM-CNR, Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), are characterized by the same electrode layout (gold electroless contacts): the anode is a central electrode (
ABBENE, Leonardo   +10 more
openaire   +3 more sources

Twin shaping filter technique for signals compensation in CZT detectors grown by the Vertical Bridgman method

2011 IEEE Nuclear Science Symposium Conference Record, 2011
CdTe/CdZnTe is a consolidated material to realize detectors for a large variety of applications, such as medical, industrial, and space research. An Italian collaboration, involving the CNR/IMEM and INAF/IASF institutes, was born some years ago with the aim to develop a national capability to produce CZT detectors starting from the material growth to ...
Auricchio N   +5 more
openaire   +4 more sources

Monitoring vertical bridgman-stockbarger growth of cadmium telluride by an eddy current technique

Journal of Electronic Materials, 1995
The electric conductivity of indium-doped cadmium telluride (CdTe) in the temperature range 600–1080°C was 163 to 1203 Ω-1m-1.In-situ monitoring of vertical Bridgman-Stockbarger growth showed an unexpected step change in the voltage response vs height.
Gary J. Rosen   +4 more
openaire   +1 more source

Influence of crucible on interface shape, position and sensitivity in the vertical Bridgman-Stockbarger technique

Journal of Crystal Growth, 1975
Abstract The temperature field inside a vertical Bridgman-Stockbarger growth ampoule was calculated for different crucible conductivities. The sensitivities of the interface position and shape to the heater temperature increases as the effectiveness of heat transfer between the ampoule and the surroundings diminishes.
Sanghamitra Sen, William R. Wilcox
openaire   +1 more source

Electrical Properties of Au/CdZnTe/Au Detectors Grown by the Boron Oxide Encapsulated Vertical Bridgman Technique

open access: yesNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016
In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy).
Andrea Zappettini   +2 more
exaly   +2 more sources

Modeling the Solute Segregation in Vertical Bridgman Growth by Using Free-Surface Technique

Crystal Research and Technology, 2001
In this paper, the solute segregation in vertical Bridgman growth of semiconductor diluted alloys is studied by using numerical simulation. The purpose of this work is the 2D axi-symmetric modeling of the transient solidification process of these crystals.
C. Stelian   +6 more
openaire   +1 more source

Characterization of precipitates in CdTe and Cd1−xZnxTe grown by vertical Bridgman-Stockbarger technique

Journal of Crystal Growth, 1993
Different polishing solutions were tested for exposing precipitates in CdTe and Cd(0.96)Zn(0.04) single crystals grown by vertical Bridgman-Stockbarger technique. A solution of 5-7% Br2 in methanol and E-solution were both effective. High resolution scanning electron microscopy with energy dispersive spectroscopy (SEM/EDS) was employed to characterize ...
J. Shen   +3 more
openaire   +1 more source

LiTaO3 Single Crystal Growth by the Vertical Bridgman Technique

Crystal Research and Technology, 2018
AbstractLithium tantalate, LiTaO3 (LT), single crystal growth by the vertical Bridgman (VB) technique is attempt for the first time. In the present VB‐LT technique, pure platinum crucibles are used in a furnace with a graphite heater and an argon atmosphere.
Eiichiro Nishimura   +3 more
openaire   +1 more source

Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface

Journal of Crystal Growth, 1994
High quality single crystals of GaSb were grown using vertical Bridgman technique with a planar melt-solid interface. Various factors affecting the interface shape during growth were investigated. In general, the shape of the freezing isotherm was found to depend on the furnace temperature profile near the melt-solid interface, the ampoule lowering ...
Dutta, PS   +3 more
openaire   +2 more sources

Evaluation of CdZnTe detectors using crystals grown by the modified vertical bridgman technique

IEEE Symposium Conference Record Nuclear Science 2004., 2005
The results of our newest depth sensing coplanar grid CdZnTe detectors will be discussed. These detectors, which utilize the third generation coplanar anode design, were fabricated by Baltic Scientific Instruments, Ltd., using crystals acquired from Yinnel Tech, Inc., having dimensions of 1.5 cmtimes1.5 cmtimes0.9 cm and 1.5 cmtimes1.5 cmtimes0.95 cm ...
B.W. Sturm   +3 more
openaire   +1 more source

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