Results 161 to 170 of about 3,608 (215)
Some of the next articles are maybe not open access.
Voltage stresses in reactors in service
Journal of the American Institute of Electrical Engineers, 1920THE authors have presented experimental data together with a physical explanation of the phenomena revealed. They have endeavored as far as possible to abstain from mathematics and obstruse theoretical considerations.
F. H. Kierstead, Royal Meeker
openaire +1 more source
Stress induced leakage current under pulsed voltage stress
Solid-State Electronics, 2002Abstract Stress induced leakage current (SILC) is one of the main problems in ultra-thin oxide MOS devices before the onset of soft or hard breakdown. This paper addresses the problem of SILC produced by dynamic stress. We have studied the behaviour of ultra-thin oxides subjected to pulsed voltage stress (PVS) and the results have been compared with ...
CESTER, ANDREA +2 more
openaire +2 more sources
A New Switched Capacitor 7L Inverter With Triple Voltage Gain and Low Voltage Stress
IEEE Transactions on Circuits and Systems II: Express Briefs, 2020In this paper, a new switched capacitor based multilevel inverter topology is proposed. The proposed topology generates seven level (7L) output voltage using a single dc voltage source along with two floating capacitors. The output voltage of the proposed topology is three-times higher than the input voltage (i.e., gain factor of Vin:Vout = 1:3) along ...
Marif Daula Siddique +4 more
openaire +2 more sources
Dynamic voltage stress effects on nMOS varactor
Microelectronics Reliability, 2006The degradations in the nMOS device due to high-frequency (900 MHz) dynamic stress are shown experimentally. The stress-induced shifts in DC and larger-signal C-V characteristics are presented. Although the high-frequency stress-induced degradations are much smaller than DC stress, the effects on C-V curves and quality factor cannot be neglected.
Yu, Chuanzhao, Yuan, J. S., Xiao, Enjun
openaire +2 more sources
Influence of VFD parameters on voltage stresses in low voltage windings
2016 57th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON), 2016Currently the frequency control is widely used to provide high level of induction motors efficiency. Studies show that typical for the variable frequency drive (VFD) severe electro-thermal stresses influencing on the windings insulation negatively affect the windings reliability.
Veronika Bolgova +2 more
openaire +1 more source
High voltage test circuit for harmonic and impulse voltage stress
2015 16th International Scientific Conference on Electric Power Engineering (EPE), 2015The paper deals with testing possibilities of discharge activity influence to a medium voltage cable system. It was observed that the discharge activity in insulation systems of high voltage devices is higher when the power electronic is present. The aim is to create a test circuit which will simulate the influence of superposed impulses and harmonics ...
Martin Knenicky, Radek Prochazka
openaire +1 more source
Distribution-transformer voltage stresses
Electrical Engineering, 1949INFREQUENT REPORTS of severe mechanical damage to small transformers as a result of nearby lightning strokes have led to the conclusion that the cause of the damage was the passage of heavy lightning currents in opposing directions in the two halves of the low-voltage windings.
K. D. Beardsley +2 more
openaire +1 more source
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 2002
In this study experiments such as constant voltage, constant current, ramp voltage have been done on gate oxide with 20 nm thickness. IV characteristics and CV characteristics after stress have been studied to investigate the gate oxide degradation mechanism. Our experimental results are different from those reported before.
null Hongwei Luo +3 more
openaire +1 more source
In this study experiments such as constant voltage, constant current, ramp voltage have been done on gate oxide with 20 nm thickness. IV characteristics and CV characteristics after stress have been studied to investigate the gate oxide degradation mechanism. Our experimental results are different from those reported before.
null Hongwei Luo +3 more
openaire +1 more source
Microelectronic Engineering, 2005
A comparative study on understanding the effect of conventional constant voltage stress (CVS) and successive constant voltage stress (SCVS) methodology on the post-breakdown transistor performance has been performed. In CVS stressing methodology, breakdowns in ultrathin gate oxides in narrow MOSFETs in moderate and high compliance current, Igl, range ...
L.J. Tang +4 more
openaire +1 more source
A comparative study on understanding the effect of conventional constant voltage stress (CVS) and successive constant voltage stress (SCVS) methodology on the post-breakdown transistor performance has been performed. In CVS stressing methodology, breakdowns in ultrathin gate oxides in narrow MOSFETs in moderate and high compliance current, Igl, range ...
L.J. Tang +4 more
openaire +1 more source
Effect of Voltage Stress on Diagnostic Parameters of Low Voltage Cables
Conference Record of the 2008 IEEE International Symposium on Electrical Insulation, 2008The most important property of the insulation is the dielectric strength, because the main function of the insulation is isolating of the electrodes on different potential. Due to the stresses the dielectric strength is decreasing till it reaches the limit of safety operation. Aging tests are performed on insulations to predict the expected lifetime of
Z.A. Tamus, B. Nemeth, I. Berta
openaire +1 more source