Results 121 to 130 of about 5,716,928 (282)

Physical Chemistry of Wet Chemical Anisotropic Etching of Silicon

open access: yesDynamic Systems and Control: Volume 2 — Haptic Interfaces for Virtual Environment and Teleoperator Systems; Applications of Intelligent Techniques; Sensors and Identification; Automotive and Agricultural Applications of Fluid Power; Adaptive Control Experiments in Emerging Technologies; Micromechanical Systems; Automatic Control Laboratory Experiments for Graduate Engineering Education, 1995
Abstract In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the <111> face of silicon is a flat face, the etch rate of which is then governed by a nucleation barrier.
openaire   +3 more sources

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

open access: yesAdvanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu   +15 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

open access: yesAdvanced Electronic Materials
Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in‐plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical ...
Kristina Bespalova   +3 more
doaj   +1 more source

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian   +23 more
wiley   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

open access: yesAdvanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee   +9 more
wiley   +1 more source

Radiative Thermal Management for Extreme Environments: Mechanisms and Design Strategies

open access: yesAdvanced Materials, EarlyView.
In this review, we discuss the fundamental mechanisms of radiative cooling and solar heating, material and structural design strategies, hybrid approaches integrating additional heat transfer pathways, and durability‐oriented designs addressing environmental stresses.
Hyung Rae Kim   +5 more
wiley   +1 more source

Parity‐Dependent THz Harmonic Generation in Electrically Pumped Micro‐Lasers Exploiting Topological Insulator–Metamaterial Gratings

open access: yesAdvanced Materials, EarlyView.
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare   +9 more
wiley   +1 more source

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

open access: yes, 2007
The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching.
Kiravittaya, S (Kiravittaya, Suwit)   +6 more
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