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Wet etching of III–V semiconductors
ChemInform, 2001Publisher Summary The processing of III–V compound semiconductors for component fabrication involves various steps in which material is removed in a controlled way—that is, etching steps. Both dry and wet etching methods are employed. This chapter focuses on wet etching and discusses the basic principles and experimental methods of semiconductor ...
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Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
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Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
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Study of Self-Limiting Etching Behavior in Wet Isotropic Etching of Silicon
Japanese Journal of Applied Physics, 1998This paper reports a self-limiting etching behavior of an isotropic silicon etchant (consisted of hydrofluoric, nitric and acetic acids) during the formation of a spherical cavity in a silicon wafer. We observe that the etch rate drops drastically when the etch-front diameter is approximately equal to 1.8 times the etch window size ...
C.-H. Han, E.S. Kim
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MRS Proceedings, 1991
ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1.
J. R. Lothian +3 more
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ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1.
J. R. Lothian +3 more
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Wet-etch figuring for precision optical contouring
Applied Optics, 2003Wet-etch figuring utilizes free surface flows driven by surface tension gradients (the Marangoni effect) to confine and stabilize the size and shape of an etchant droplet attached to the underside of a glass surface. This droplet, or wetted zone, is translated on the surface, etching where it contacts and leaving behind no residue, to facilitate an ...
Michael C, Rushford +5 more
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The Effect of Wet Etching on Surface Properties of HgCdTe
Journal of Electronic Materials, 2009The surface of HgCdTe, grown by molecular-beam epitaxy and liquid-phase epitaxy, was studied by atomic force microscopy and x-ray photoelectron microscopy after etching in different solutions such as Br:methanol and HBr:H2O2:H2O. Minority-carrier lifetime and surface recombination velocity were measured by photoelectron decay spectroscopy.
Sporken, Robert +6 more
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Wet Refinement of Dry Etched Trenches in Silicon
Journal of The Electrochemical Society, 1997Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile.
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2002
In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
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In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
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