Results 251 to 260 of about 80,250 (296)

Photosensitive etch protection coating for silicon wet-etch applications

SPIE Proceedings, 2008
A spin-on polymeric material has been developed to replace the silicon nitride mask used in the MEMS industry for silicon wet-etch processing. Built-in photosensitivity eliminates the need for additional photoresists in the system. The process consists of applying an organosilane-based primer layer onto a silicon wafer, followed by spin coating the ...
J. Dalvi-Malhotra, X. F. Zhong, C. Planje   +2 more
openaire   +1 more source

Wet etching of III–V semiconductors

ChemInform, 2001
Publisher Summary The processing of III–V compound semiconductors for component fabrication involves various steps in which material is removed in a controlled way—that is, etching steps. Both dry and wet etching methods are employed. This chapter focuses on wet etching and discusses the basic principles and experimental methods of semiconductor ...
openaire   +1 more source

Wet etching of thin SnO2 films

Sensors and Actuators A: Physical, 1990
The etching behaviour of thin SnO2 films on Si in hydroiodic acid is investigated. The etch rate depends linearly on the acid concentration in the range 22–55% and increases monotonically with the temperature up to 40 °C. A steep increase in observed for higher temperatures.
V.K. Gueorguiev, L.I. Popova, G.D. Beshkov, N.A. Tomajova   +3 more
openaire   +1 more source

Selective Wet Etching of Lithium Gallate

Journal of The Electrochemical Society, 1998
Lithium gallate (LGO) is an attractive, near lattice matched substrate for the growth of GaN. In addition, LGO substrates provide a convenient route to forming thin films of GaN as used in substrate removal or lift-off processes. We report the wet etching of LGO substrates for the production of GaN thin films.
Thomas J. Kropewnicki, W. Alan Doolittle, Carrie Carter‐Coman, Sangboem Kang, Paul A. Kohl, Nan Marie Jokerst, April S. Brown   +6 more
openaire   +1 more source

ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

International Journal of High Speed Electronics and Systems, 2004
We describe the fabrication of the CAVET (Current Aperture Vertical Electron Transistor) by Photoelectrochemical (PEC) formation of a current aperture. Etch process is quite naturally critical to the achievement of the etched aperture in CAVET. We provide some background on that etch process, and the subsequent modification and optimization of the ...
YAN GAO, ILAN BEN-YAACOV, UMESH MISHRA, EVELYN HU   +3 more
openaire   +1 more source

Barrier and Copper Seedlayer Wet Etching

Solid State Phenomena, 2005
This paper summarizes the process development of TiN barrier etching in presence of copper, for a thick copper level in BICMOS technology. In an industrial context, we have chosen to use a SC1 chemistry in a spin etch single wafer tool. The SC1 composition and therefore the pH level allows - the barrier to be etched with no metallic residues, ( if not ...
Claire Therese Richard, M.M. Frank, Pascal Besson, E. Serret, N. Hotellier, Alessio Beverina, L. Dumas, Lucile Broussous, F. Kovacs, Thierry Billon   +9 more
openaire   +1 more source

Modeling and Control of Wet Etching

IFAC Proceedings Volumes, 1996
Abstract Etching is one of the critical steps in the fabrication of microelectronic devices. Tighter process control is required to improve product yields. An on-line optimal controller is proposed together with a novel optimal design principle that is capable of both bottom linewidth and sidewall curvature control.
B. Zhou, W.F. Ramirez
openaire   +1 more source

Wet Etch Characteristics of Hf-silicates

ECS Meeting Abstracts, 2006
Abstract not Available.
Martine Claes, Vasile Paraschiv, Dries Dictus, Thierry Conard, Werner Boullart, Serge Vanhaelemeersch, Stefan De Gendt   +6 more
openaire   +1 more source

Microloading Effect in InP Wet Etching

Journal of The Electrochemical Society, 1993
The microloading effect in the anisotropic wet etching of InP is quantitatively studied for distributed feedback-LD grating fabrication. In this study, 240 nm pitch gratings based on resist patterns with various space widths defined by E-beam lithography were etched in saturated bromine water (SBW) and hydrobromic acid (SBW+10 HBr+40 H 2 O). The etched
T. Nishida, T. Tamamura
openaire   +1 more source

Wet Etching of Silicon in Planar Nanochannels

Langmuir
Silicon (Si) alkaline etching constitutes a fundamental process in the semiconductor industry. Although its etching kinetics on plain substrates have been thoroughly investigated, the kinetics of Si wet etching in nanoconfinements have yet to be fully explored despite its practical importance in three-dimensional (3-D) semiconductor manufacturing ...
Yiding Zhong, Dohyun Park, Siyang Xiao, Shan Hu, Liangwei Zheng, Chuanhua Duan   +5 more
openaire   +2 more sources