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Wet Refinement of Dry Etched Trenches in Silicon
Journal of The Electrochemical Society, 1997Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile.
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The studies on wet chemical etching via in situ liquid cell TEM
Ultramicroscopy, 2021Qing Chen, Jiamin Tian
exaly
Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects
ACS Applied Materials & Interfaces, 2022He Wang, Linmao Qian, Bingjun Yu
exaly
High-Q Thin-Film Lithium Niobate Microrings Fabricated with Wet Etching
Advanced Materials, 2023Yang Li, Jinze He
exaly
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters
Advanced Materials, 2013Hyunsoo Kim, Sung-Nam Lee, Ki-Ryong Song
exaly