Results 251 to 260 of about 23,327 (300)

On the wet etching of Pyrex glass

Sensors and Actuators A: Physical, 2008
Abstract This paper addresses a commonly raised question regarding wet etching of Pyrex glass: “How are the defects on the glass generated during etching process while most of the masking materials are chemically inert in the etching solution?” The response to this question relies in controlling the residual stress in the masking layer (its value ...
Ciprian Iliescu, Bangtao Chen, Jianmin Miao   +2 more
exaly   +2 more sources

Wet Etching of Silicon in Planar Nanochannels

Langmuir
Silicon (Si) alkaline etching constitutes a fundamental process in the semiconductor industry. Although its etching kinetics on plain substrates have been thoroughly investigated, the kinetics of Si wet etching in nanoconfinements have yet to be fully explored despite its practical importance in three-dimensional (3-D) semiconductor manufacturing ...
Yiding Zhong, Dohyun Park, Siyang Xiao, Shan Hu, Liangwei Zheng, Chuanhua Duan   +5 more
openaire   +3 more sources

Wet etching of glass

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005
The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet ...
C. Iliescu, F.E.H. Tay
openaire   +1 more source

Acoustophoresis in Wet-Etched Glass Chips

Analytical Chemistry, 2008
Acoustophoresis in microfluidic structures has primarily been reported in silicon microfabricated devices. This paper demonstrates, for the first time, acoustophoresis performed in isotropically etched glass chips providing a performance that matches that of the corresponding silicon microdevices.
Mikael, Evander, Andreas, Lenshof, Thomas, Laurell, Johan, Nilsson   +3 more
openaire   +2 more sources

Wet Etching Methods for Perovskite Substrates

MRS Proceedings, 1999
AbstractIn oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) are presented.
Leca, V., Rijnders, Augustinus J.H.M., Koster, Gertjan, Blank, David H.A., Rogalla, Horst   +4 more
openaire   +3 more sources

Wet etching of fused silica: a multiplex study [PDF]

Journal of Physics D: Applied Physics, 2004
The machining process of transparent materials using the laser induced backside wet etching (LIBWE) procedure was studied. In the course of this, experimental investigations and numerical calculations were carried out. Fused silica plates were irradiated by an ArF excimer laser, using a naphthalene?methyl methacrylate solution as an absorbing liquid ...
Vass Csaba, Smausz Tomi, Hopp Béla
openaire   +2 more sources

Numerical simulation of wet-chemical etching

2008
The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus, Kuerten, Johannes G.M., Kuiken, H.K., Zandbergen, P.J.   +3 more
openaire   +1 more source

Modeling and Control of Wet Etching

IFAC Proceedings Volumes, 1996
Abstract Etching is one of the critical steps in the fabrication of microelectronic devices. Tighter process control is required to improve product yields. An on-line optimal controller is proposed together with a novel optimal design principle that is capable of both bottom linewidth and sidewall curvature control.
B. Zhou, W.F. Ramirez
openaire   +1 more source

Simple wet etching of GaN

SPIE Proceedings, 2001
We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode.
Giacinta Parish, Paul A. Scali, Sue M. Spaargaren, Brett D. Nener   +3 more
openaire   +1 more source

A simple wet etch for GaN

Journal of Electronic Materials, 1999
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched.
Bardwell, J. A., Foulds, I. G., Webb, J. B., Tang, H., Fraser, J., Moisa, S., Rolfe, S. J.   +6 more
openaire   +2 more sources