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Wet Refinement of Dry Etched Trenches in Silicon
Journal of The Electrochemical Society, 1997Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile.
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2002
In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
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In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
openaire +1 more source
The studies on wet chemical etching via in situ liquid cell TEM
Ultramicroscopy, 2021Qing Chen, Jiamin Tian
exaly
Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects
ACS Applied Materials & Interfaces, 2022Linmao Qian, Bingjun Yu, Licong Cui
exaly
High‐Q Thin‐Film Lithium Niobate Microrings Fabricated with Wet Etching
Advanced Materials, 2023Yang Li
exaly
Characterization of masking layers for deep wet etching of glass in an improved HF/HCl solution
Surface and Coatings Technology, 2005Ciprian Iliescu +2 more
exaly