Results 221 to 230 of about 16,351 (259)

Numerical simulation of wet-chemical etching

2008
The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus, Kuerten, Johannes G.M., Kuiken, H.K., Zandbergen, P.J.   +3 more
openaire   +1 more source

Simple wet etching of GaN

SPIE Proceedings, 2001
We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode.
Giacinta Parish, Paul A. Scali, Sue M. Spaargaren, Brett D. Nener   +3 more
openaire   +1 more source

Modeling and Control of Wet Etching

IFAC Proceedings Volumes, 1996
Abstract Etching is one of the critical steps in the fabrication of microelectronic devices. Tighter process control is required to improve product yields. An on-line optimal controller is proposed together with a novel optimal design principle that is capable of both bottom linewidth and sidewall curvature control.
B. Zhou, W.F. Ramirez
openaire   +1 more source

Wet etching of III–V semiconductors

ChemInform, 2001
Publisher Summary The processing of III–V compound semiconductors for component fabrication involves various steps in which material is removed in a controlled way—that is, etching steps. Both dry and wet etching methods are employed. This chapter focuses on wet etching and discusses the basic principles and experimental methods of semiconductor ...
openaire   +1 more source

A simple wet etch for GaN

Journal of Electronic Materials, 1999
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched.
Bardwell, J. A., Foulds, I. G., Webb, J. B., Tang, H., Fraser, J., Moisa, S., Rolfe, S. J.   +6 more
openaire   +2 more sources

Wet chemical etching of AlN

Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, S. P. Kilcoyne   +5 more
openaire   +1 more source

Wet and Dry Etching of InGaP

MRS Proceedings, 1991
ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1.
J. R. Lothian, J. M. Kuo, S. J. Pearton, F. Ren   +3 more
openaire   +1 more source

Wet Etching of Silicon in Planar Nanochannels

Langmuir
Silicon (Si) alkaline etching constitutes a fundamental process in the semiconductor industry. Although its etching kinetics on plain substrates have been thoroughly investigated, the kinetics of Si wet etching in nanoconfinements have yet to be fully explored despite its practical importance in three-dimensional (3-D) semiconductor manufacturing ...
Yiding Zhong, Dohyun Park, Siyang Xiao, Shan Hu, Liangwei Zheng, Chuanhua Duan   +5 more
openaire   +2 more sources

Study of Self-Limiting Etching Behavior in Wet Isotropic Etching of Silicon

Japanese Journal of Applied Physics, 1998
This paper reports a self-limiting etching behavior of an isotropic silicon etchant (consisted of hydrofluoric, nitric and acetic acids) during the formation of a spherical cavity in a silicon wafer. We observe that the etch rate drops drastically when the etch-front diameter is approximately equal to 1.8 times the etch window size ...
C.-H. Han, E.S. Kim
openaire   +1 more source

Wet-etch figuring for precision optical contouring

Applied Optics, 2003
Wet-etch figuring utilizes free surface flows driven by surface tension gradients (the Marangoni effect) to confine and stabilize the size and shape of an etchant droplet attached to the underside of a glass surface. This droplet, or wetted zone, is translated on the surface, etching where it contacts and leaving behind no residue, to facilitate an ...
Michael C, Rushford, Jerald A, Britten, Shamasunder N, Dixit, Curly R, Hoaglan, Michael D, Aasen, Leslie J, Summers   +5 more
openaire   +2 more sources