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Wet Etching of beta-Ga2O3 Substrates

Wet Etching of beta-Ga2O3 Substrates
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Wet etching of glass

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005
The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet ...
C. Iliescu, F.E.H. Tay
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Wet Etching Methods for Perovskite Substrates

MRS Proceedings, 1999
AbstractIn oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) are presented.
Leca, V., Rijnders, Augustinus J.H.M., Koster, Gertjan, Blank, David H.A., Rogalla, Horst   +4 more
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Acoustophoresis in Wet-Etched Glass Chips

Analytical Chemistry, 2008
Acoustophoresis in microfluidic structures has primarily been reported in silicon microfabricated devices. This paper demonstrates, for the first time, acoustophoresis performed in isotropically etched glass chips providing a performance that matches that of the corresponding silicon microdevices.
Mikael, Evander, Andreas, Lenshof, Thomas, Laurell, Johan, Nilsson   +3 more
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Simple wet etching of GaN

SPIE Proceedings, 2001
We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode.
Giacinta Parish, Paul A. Scali, Sue M. Spaargaren, Brett D. Nener   +3 more
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Wet chemical etching of AlN

Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, S. P. Kilcoyne   +5 more
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Wet-etch figuring for precision optical contouring

Applied Optics, 2003
Wet-etch figuring utilizes free surface flows driven by surface tension gradients (the Marangoni effect) to confine and stabilize the size and shape of an etchant droplet attached to the underside of a glass surface. This droplet, or wetted zone, is translated on the surface, etching where it contacts and leaving behind no residue, to facilitate an ...
Michael C, Rushford, Jerald A, Britten, Shamasunder N, Dixit, Curly R, Hoaglan, Michael D, Aasen, Leslie J, Summers   +5 more
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Numerical simulation of wet-chemical etching

2008
The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus, Kuerten, Johannes G.M., Kuiken, H.K., Zandbergen, P.J.   +3 more
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