Results 241 to 250 of about 490,111 (287)
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Numerical simulation of wet-chemical etching
2008The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus +3 more
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SPIE Proceedings, 2001
We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode.
Giacinta Parish +3 more
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We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode.
Giacinta Parish +3 more
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Modeling and Control of Wet Etching
IFAC Proceedings Volumes, 1996Abstract Etching is one of the critical steps in the fabrication of microelectronic devices. Tighter process control is required to improve product yields. An on-line optimal controller is proposed together with a novel optimal design principle that is capable of both bottom linewidth and sidewall curvature control.
B. Zhou, W.F. Ramirez
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Journal of Electronic Materials, 1999
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched.
Bardwell, J. A. +6 more
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A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched.
Bardwell, J. A. +6 more
openaire +2 more sources
Applied Physics Letters, 1995
Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
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Single-crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist developer solution, in which the active component is KOH. The etching is thermally activated with an activation energy of 15.5±0.4 kcal mol−1, and the etch rate is found to be strongly dependent on the crystalline quality of the AlN.
J. R. Mileham +5 more
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Wet etching of III–V semiconductors
ChemInform, 2001Publisher Summary The processing of III–V compound semiconductors for component fabrication involves various steps in which material is removed in a controlled way—that is, etching steps. Both dry and wet etching methods are employed. This chapter focuses on wet etching and discusses the basic principles and experimental methods of semiconductor ...
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MRS Proceedings, 1991
ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1.
J. R. Lothian +3 more
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ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1.
J. R. Lothian +3 more
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Study of Self-Limiting Etching Behavior in Wet Isotropic Etching of Silicon
Japanese Journal of Applied Physics, 1998This paper reports a self-limiting etching behavior of an isotropic silicon etchant (consisted of hydrofluoric, nitric and acetic acids) during the formation of a spherical cavity in a silicon wafer. We observe that the etch rate drops drastically when the etch-front diameter is approximately equal to 1.8 times the etch window size ...
C.-H. Han, E.S. Kim
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The Effect of Wet Etching on Surface Properties of HgCdTe
Journal of Electronic Materials, 2009The surface of HgCdTe, grown by molecular-beam epitaxy and liquid-phase epitaxy, was studied by atomic force microscopy and x-ray photoelectron microscopy after etching in different solutions such as Br:methanol and HBr:H2O2:H2O. Minority-carrier lifetime and surface recombination velocity were measured by photoelectron decay spectroscopy.
Sporken, Robert +6 more
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2002
In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
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In this chapter we will discuss wet and dry patterning techniques for SiC and the relative merits of these methods. We describe the basic principles involved in etching SiC and problems that can arise because of the binary nature of the lattice and its relatively high bond strength.
openaire +1 more source