Results 61 to 70 of about 490,111 (287)
Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure
Thi-Thuy-Nga Nguyen +7 more
doaj +1 more source
Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
Digital Etching of Molybdenum Interconnects Using Plasma Oxidation
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing ...
Ivan Erofeev +13 more
doaj +1 more source
Controlling the thermal radiation spectra of materials is one of the promising ways to advance energy system efficiency. It is well known that the thermal radiation spectrum can be controlled through the introduction of periodic surface microstructures ...
M Shimizu +6 more
doaj +1 more source
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek +6 more
wiley +1 more source
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Abstract Wet chemical and plasma etch processes were developed for pattering of Sc2O3 films on GaN. Chlorine-based plasma chemistries produced a significant chemical enhancement of removal rate over pure Ar sputtering. The etching was anisotropic and did not significantly alter the surface composition of the Sc2O3 films.
Department of Materials Science and Engineering, University of Florida Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution ) +10 more
openaire +2 more sources
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Bulk micromachining is commonly used to fabricate microstructures such as deep cavities, through-holes, and microchannels in glass wafers, which have diverse applications in the areas of science and technology.
Vishal Sahu +5 more
doaj +1 more source
Fabrication of a novel quartz micromachined gyroscope
A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition.
Liqiang Xie +3 more
doaj +1 more source

