Results 81 to 90 of about 13,430 (257)

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

open access: yesAdvanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang   +3 more
wiley   +1 more source

Exploring nanoarchitectonics and optical properties of PAA-ZnO@BCP wide-band-gap organic semiconductors

open access: yesScientific Reports
This work reports the formation of polyacrylic acid (PAA)—zinc oxide (ZnO)—bromocresol purple (BCP), (PAA-ZnO@ (0.00–0.01) BCP wide-bandgap organic semiconductors deposited onto glass substrates via a sol–gel polymerization process.
A. M. Mansour   +2 more
doaj   +1 more source

Solar Heating Enhanced Selective Recovery of Metal Ions Through Flowing Electrodes Enabled by Hybrid Carbon Nanostructures

open access: yesAdvanced Functional Materials, EarlyView.
A new electrochemical system based on a microporous hybrid of carbon nanoplatelets and nanotubes to selectively capture Ni2+ from wastewater is constructed. The system temperature rises rapidly when irradiated with sunlight, which enhances the Ni2+ removal rate by 250% and the selectivity by 53%, and the energy consumption is also reduced by 51 ...
Ziquan Wang   +11 more
wiley   +1 more source

Exciton Binding Energy Modulation in 2D Perovskites: A Phenomenological Keldysh Framework

open access: yesAdvanced Functional Materials, EarlyView.
The intrinsic screening effects are successfully decoupled from structural distortion by rigorously designing a series of 2D perovskites. This enabled us to demonstrate how the dielectric environment modulates the quasiparticle bandgap and exciton binding energy.
Kitae Kim   +15 more
wiley   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

open access: yesAdvanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek   +11 more
wiley   +1 more source

Determination of Sensitivity of Semiconductor Detectors of Gamma-Radiation

open access: yesEast European Journal of Physics, 2012
Properties of response functions of room temperature gamma-radiation detectors based on wide band-gap semiconductors are researched using Monte-Carlo method. It is shown that approximate formulas which connect detector sensitivity with absorbed energy of
Alexandr Zakharchenko
doaj  

Electronic Structure of Single-Wall Silicon Nanotubes and Silicon Nanoribbons: Helical Symmetry Treatment and Effect of Dimensionality

open access: yesAdvances in Condensed Matter Physics, 2013
Helical method of tube formation and Hartree-Fock SCF method modified for periodic solids have been applied in study of electronic properties of single-wall silicon nanotubes (SWSiNT), silicone sheet, and nanoribbons (SiNR).
Pavol Baňacký   +2 more
doaj   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim   +6 more
wiley   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

open access: yesAdvanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato   +10 more
wiley   +1 more source

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