Results 71 to 80 of about 26,645 (265)

Growth and Magnetism of Mn_xGe_1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy

Crystals, 2020
Self-assembled MnGe quantum dots (QDs) were grown on Si (001) substrates using molecular beam epitaxy with different growth temperatures and Ge deposition thicknesses to explore the interaction among Mn doping, Ge deposition, the formation of ...
Maolong Yang, Liming Wang, Jie You, Lingyao Meng, Yichi Zhang, Bo Wang, Bin Wang, Huiyong Hu   +7 more
doaj   +1 more source

APTES‐Mediated Ti‐Squarate MOF/n‐GaN Nanowire Photoanodes for Efficient Photoelectrochemical Water Splitting

Advanced Functional Materials, EarlyView.
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh, Sergio Carrasco, Sooyeon Ra, Seok‐Ho Seo, Chandran Bagavath, Sung‐Un Kim, Min‐Seok Lee, Jong‐Su Kim, Miriam Vos‐Gracia, Dan Na, Kyung‐Hwan Jin, Sangmin An, Dong Ick Son, Cheul‐Ro Lee, Patricia Horcajada, Yong‐Ho Ra   +15 more
wiley   +1 more source

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

Advanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee, Changwoo Pyo, Seungchan Lee, Juho Son, Yoongi Cho, Jiho Shin, Sungmoon Park, Sungjin Kim, Changmin An, Heein Yoon, Myungsoo Kim   +10 more
wiley   +1 more source

Buried Interface Regulation with TbCl3 for Highly-Efficient All-Inorganic Perovskite/Silicon Tandem Solar Cells

Nano-Micro Letters
Highlights The lanthanide compound of TbCl3 improved the wettability of Me-4PACz and further enhanced crystallization, in which the additional Cl− ions passivate iodine vacancy and improve energy level alignment at buried interface.
Wenming Chai, Weidong Zhu, He Xi, Dazheng Chen, Hang Dong, Long Zhou, Hailong You, Jincheng Zhang, Chunfu Zhang, Chunxiang Zhu, Yue Hao   +10 more
doaj   +1 more source

Modulation of Surface‐Associated Transport in (Bi1‐xSbx)2Te3 via Battery‐ Inspired Solid‐State Iontronic Gating

Advanced Functional Materials, EarlyView.
Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva, Reza Asadi, He Ren, Rabiul Islam, Jagadeesh Moodera, Guo‐Xing Miao   +5 more
wiley   +1 more source

Photonic transformer chip: interference is all you need

PhotoniX
As the core component of the transformer model, the attention has been proved as all you need in artificial intelligence field in recent years. However, conventional electronic processors are unable to cope with the exponentially increasing hardware ...
Ye Tian, Shuiying Xiang, Xingxing Guo, Yahui Zhang, Jiashang Xu, Shangxuan Shi, Haowen Zhao, Yizhi Wang, Xinran Niu, Wenzhuo Liu, Yue Hao   +10 more
doaj   +1 more source

Self‐Adaptive Gradient Interphase Enables Durable Solid‐State Lithium Metal Batteries

Advanced Functional Materials, EarlyView.
This work presents a machine learning‐guided interfacial design that forms a self‐adaptive graded interphase on lithium metal anode. A B105M40 composite interlayer evolves into lithiophilic, porous, and fast‐ion‐conducting phases, enabling intimate contact, dendrite suppression, and uniform lithium deposition.
Hongmin Liu, Rui Li, Yitao Lou, Xinran Gao, Min Xu, Shijian Wang, Nana Wang, Huakun Liu, Guoxiu Wang, Zhongchao Bai   +9 more
wiley   +1 more source

CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High‐Performance X‐Ray Detection

Advanced Electronic Materials
CsPbBr3–nanodiamonds (NDs) hybrid wafers are developed through a scalable solid‐state grinding and cold‑pressing approach for high‑performance X‑ray detection.
Yanan Gong, Zhuangjie Xu, Weidong Zhu, Xiaoxuan Zhang, Zihao Wang, Zeyang Ren, Yanshuang Ba, He Xi, Zhimin Li, Chunfu Zhang, Jincheng Zhang, Yue Hao   +11 more
doaj   +1 more source

Enhanced Breakdown Voltage in GaN HEMTs Using Step-Graded AlGaN Buffer Layers

Micromachines
In this work, step-graded AlGaN buffer layers were introduced into GaN high-electron-mobility transistors to enhance their off-state voltage-blocking capability without intentional deep-level buffer doping.
Junchun Bai, Xu Liu, Hongchang Tao, Huake Su, Jincheng Zhang, Yue Hao   +5 more
doaj   +1 more source

Digitally Printed Eco‐Friendly Electronic Devices

Advanced Functional Materials, EarlyView.
Fabrication of electronics using eco‐friendly materials through digital printing routes is a promising strategy for improving life cycle sustainability and reducing the environmental impacts of conventional manufacturing. This review highlights state‐of‐the‐art eco‐friendly materials, green ink formulations, various resource‐efficient digital printing ...
Nitheesh M. Nair, Mikel Rincón‐Iglesias, Cristian Mendes‐Felipe, Fatemeh Etehadi, Senentxu Lanceros‐Méndez, Gerardo Hernandez‐Sosa   +5 more
wiley   +1 more source