Results 71 to 80 of about 93,816 (297)
Advanced Functional Materials, EarlyView.ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Cephalopod‐inspired photonic microparticles with dynamic structural coloration are fabricated via confined self‐assembly of linear block copolymers into ellipsoids containing stacked lamellae. Embedded superparamagnetic nanoparticles enable rapid magnetic alignment, restoring vivid, angle‐dependent color.
Gianluca Mazzotta +8 more
wiley +1 more source
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +1 more source
A wide bandgap plasmonic Bragg reflector
Optics Express, 2008 Surface plasmon polaritons (SPPs) Bragg reflector with more excellent optical properties are investigated numerically. By introducing a finite array of periodic grooves on the two surfaces of metal-insulator-metal (MIM) waveguide, we fulfill the periodical changes of effective refractive index, which leads to the photonic band gap (PBG).
Jian-Qiang, Liu +6 more
openaire +2 more sources
Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures
Advanced Functional Materials, EarlyView.Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne +17 more
wiley +1 more source
Wide bandgap and ultra-wide bandgap semiconductors
Fundamental Research, 2021 Yue Hao, Fengyi Jiang
openaire +2 more sources
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Efficient Ni/Au Mesh Transparent Electrodes for ITO-Free Planar Perovskite Solar Cells
Nanomaterials, 2019 Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer,
Dazheng Chen +12 more
doaj +1 more source
Advanced Functional Materials, EarlyView.ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li +16 more
wiley +1 more source
Ferromagnetism in magnetically doped III-V semiconductors
, 2001 The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism in GaAs(Mn) no ...
A. A. Abrikosov +34 more
core +1 more source