Results 61 to 70 of about 93,816 (297)

Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications

, 2010
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga concentration.
Amin B., B. Amin, Benkhedir M. L., Blaha P., Fox M., Iftikhar Ahmad, Jiang H. X., M. Maqbool, Nakamura S., R. Ahmad, S. Goumri-Said   +10 more
core   +1 more source

Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low R_j-a of 13.5 K/W

IEEE Journal of the Electron Devices Society
Gallium nitride (GaN) is a high-performance wide bandgap semiconductor material with unique physical and chemical properties such as higher breakdown electric field, higher electron density, superior electron mobility and saturation velocity.
Jiajun Zhou, Xin Feng, Weihang Zhang, Kui Dang, Yachao Zhang, Zeyang Ren, Yanjing He, Xianhe Liu, Hong Zhou, Zhihong Liu, Yue Hao, Jincheng Zhang   +11 more
doaj   +1 more source

Flexible Solar-Blind Ga₂O₃ Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

IEEE Photonics Journal, 2019
In this work, flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga2O3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the ...
Zhe Li, Yu Xu, Jiaqi Zhang, Yaolin Cheng, Dazheng Chen, Qian Feng, Shengrui Xu, Yachao Zhang, Jincheng Zhang, Yue Hao, Chunfu Zhang   +10 more
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

, 2015
Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct.
Cao, H. N., Si, M. S., Wang, Y. H., Xue, D. S., Zhang, J. C., Zhang, Z. Y.   +5 more
core   +2 more sources

High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

Nanoscale Research Letters, 2019
The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts.
Yangyang Gao, Ang Li, Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue Hao   +12 more
doaj   +1 more source

Stacking‐Engineered Magnonic Topology and Transport in Honeycomb Homobilayers

Advanced Functional Materials, EarlyView.
ABSTRACT Topological magnons have emerged as a promising platform for dissipationless bosonic transport. However, a straightforward and effective strategy to engineer such topological states in real materials has yet to be fully realized. Here, a general scheme for controlling magnonic topological states via stacking engineering in van der Waals ...
Xiaoran Feng, Yingxi Bai, Bo Yuan, Ying Dai, Baibiao Huang, Chengwang Niu, Xiaotian Wang   +6 more
wiley   +1 more source

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Nanoscale Research Letters, 2019
Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in
Jiaduo Zhu, Jing Ning, Dong Wang, Jincheng Zhang, Lixin Guo, Yue Hao   +5 more
doaj   +1 more source

Covalent Organic Frameworks for Photocatalytic CO2 Reduction: Metal Integration Principles, Strategies and Functions

Advanced Functional Materials, EarlyView.
Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He, Minxian Zhang, Jinqiang Zhang, Hongqi Sun, Shaobin Wang, Xiaoguang Duan   +5 more
wiley   +1 more source

Moisture-Resistant Scalable Ambient-Air Crystallization of Perovskite Films via Self-Buffered Molecular Migration Strategy

Nano-Micro Letters
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang, Weidong Zhu, Laijun Liang, Wenming Chai, Xiaomeng Wu, Zeyang Ren, Long Zhou, Dazheng Chen, He Xi, Chunfu Zhang, Jincheng Zhang, Yue Hao   +11 more
doaj   +1 more source