Results 61 to 70 of about 29,046 (313)
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber +12 more
wiley +1 more source
ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators [PDF]
Zimin Chen +10 more
openalex +1 more source
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-bandgap semiconductors. This topic is hot - both literally and metaphorically - and advances cover both research and commercial devices. Progress was reported on high-power, high-voltage, high-temperature devices that use gallium nitride and silicon ...
openaire +1 more source
X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim +21 more
wiley +1 more source
Efficient Ni/Au Mesh Transparent Electrodes for ITO-Free Planar Perovskite Solar Cells
Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer,
Dazheng Chen +12 more
doaj +1 more source
DARPA perspectives are probably anxiously awaited by those having to make the grade and eagerly anticipated by observers as the ‘sine qua non’ for advanced compound devices. Mark Rosker's paper reported on completion of phase 1 of DARPA's wide bandgap initiative and lays down the ambitions and expectations of phases II and ...
openaire +1 more source
Wide‐Bandgap Semiconductors: Nanostructures, Defects, and Applications [PDF]
Nanostructured wide-bandgap semiconductors (NWS), such as III-nitrides, SiC, ZnO, TiO 2 , diamond, AlN, and BN, have attracted intensive research attention owing to prospective applications in solid-state lighting, solar cells, power electronics, sensors, spintronics, and MEMS/NEMS.
Meiyong Liao +4 more
openaire +1 more source
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin +10 more
wiley +1 more source
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +1 more source
LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives [PDF]
Matteo Mastellone +14 more
openalex +1 more source

