Results 61 to 70 of about 26,645 (265)
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
CrystalsThermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu +12 more
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Advanced Functional Materials, EarlyView.This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha +10 more
wiley +1 more source
Efficient Ni/Au Mesh Transparent Electrodes for ITO-Free Planar Perovskite Solar Cells
Nanomaterials, 2019 Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer,
Dazheng Chen +12 more
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Wide bandgap and ultra-wide bandgap semiconductors
Fundamental Research, 2021 Yue Hao, Fengyi Jiang
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III-Vs Review, 2005 DARPA perspectives are probably anxiously awaited by those having to make the grade and eagerly anticipated by observers as the ‘sine qua non’ for advanced compound devices. Mark Rosker's paper reported on completion of phase 1 of DARPA's wide bandgap initiative and lays down the ambitions and expectations of phases II and ...
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Multidimensional‐Encoded High‐Fidelity Spectrometers With a Floating‐Base Bipolar Junction
Advanced Functional Materials, EarlyView.A floating‐base bipolar junction photodetector enables multidimensional spectral encoding through synergistic gate‐ and drain‐bias modulation of interfacial barrier matching. The resulting complementary spectral responses form a diverse, weakly correlated response matrix, enabling robust and high‐fidelity spectral reconstruction even at sub‐nanoampere ...
Sang‐Hyeon Lee +11 more
wiley +1 more source
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
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Advanced Functional Materials, EarlyView.Combining field‐effect surface passivation of a narrow‐bandgap tin–lead perovskite by diammonium ions with introducing oleyl‐based amphiphiles to create insulating interface layers between the absorber and the adjacent hole and electron transporting layers increases the open‐circuit voltage to 91.5% of the detailed‐balance limit and enhances the power ...
Vishnu Vijayakumar +18 more
wiley +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
Advanced Functional Materials, EarlyView.The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
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Advanced Functional Materials, EarlyView.Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park +7 more
wiley +1 more source