Results 41 to 50 of about 93,816 (297)
Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions [PDF]
, 2017 Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors.
Dou, L, Peidong Yang, CZN, Yang, P
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Research on the epitaxial direction control and mechanism of polycrystalline diamond grains
Functional DiamondThe control of diamond film growth is crucial for the application of diamond films. In this article, different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process.
Li Junpeng +10 more
doaj +1 more source
Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion
MicromachinesThe explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai +13 more
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Evaluating Energy Absorption Performance of Filled Lattice Structures
Advanced Engineering Materials, EarlyView.Maximum stress must be considered to robustly evaluate energy absorber designs. This approach was applied to compare all types of absorbers in a single Ashby diagram and determine the utility of filling lattice voids with a second material. High‐performance fillers can improve the performance of lattices that are limited by buckling or catastrophic ...
Christian Bonney +2 more
wiley +1 more source
, 2019 Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy
A. Hallén +8 more
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750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers
MicromachinesIn this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two ...
Shuzhen You +11 more
doaj +1 more source
An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors
Advanced Intelligent Systems, 2023 Optoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, and memory in an energy‐efficient manner. Herein, a light‐induced
Bo Wang +12 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A novel phthalocyanine (PC)‐based metal–organic framework (MOFs) is synthesized using ditopic PC linkers obtained through regioselective statistical condensation. The resulting MOF exhibits significant improvements in electronic absorption, thereby enhancing the material's performance in light harvesting and energy conversion.
Lukas S. Langer +12 more
wiley +1 more source
Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
, 2018 An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions.
Arnau, Andrés +10 more
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Guidelines for the bandgap combinations and absorption windows for organic tandem and triple-junction solar cells [PDF]
, 2012 Organic solar cells have narrow absorption windows, compared to the absorption band of inorganic semiconductors. A possible way to capture a wider band of the solar spectrum-and thus increasing the power conversion efficiency-is using more solar cells ...
Minnaert, Ben, Veelaert, Peter
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