Results 51 to 60 of about 93,816 (297)
Research on Linear Energy Transfer of SiC Materials Based on Monte Carlo Method
The energy deposition process for the main components of SIC Schottky diodes is simulated based on Geant4. Particle bombardment results were simulated under different angles, target materials and doping concentrations on the same target material for ...
Jiamu Xiao +5 more
doaj +1 more source
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-bandgap semiconductors. This topic is hot - both literally and metaphorically - and advances cover both research and commercial devices. Progress was reported on high-power, high-voltage, high-temperature devices that use gallium nitride and silicon ...
openaire +1 more source
Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley +1 more source
We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond.
Dorfer, C. +6 more
core +1 more source
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu +12 more
doaj +1 more source
Rainbow Trapping in Highly Doped Silicon Graded Grating Strip at the Terahertz Range
In this paper, we propose surface plasma polaritons (SPPs) propagating along the structure of grating grooves based on highly doped silicon, which exhibits better performance of exciting SPPs than metal at low frequency (e.g., microwaves, mid infrared ...
Yan Liu +8 more
doaj +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Realization of a three-dimensional photonic topological insulator
Confining photons in a finite volume is in high demand in modern photonic devices. This motivated decades ago the invention of photonic crystals, featured with a photonic bandgap forbidding light propagation in all directions.
Chen, Hongsheng +9 more
core +1 more source
The negative electron affinity of diamond allows to emit highly reductive electrons. By introducing intra‐bandgap states and an optimized electron transfer mechanism by surface functionalization with Ru(bpy)3, the formation of solvated electrons is achieved upon solar irradiation.
Benjamin Kiendl +20 more
wiley +1 more source
This study presents a new hole transporting material (HTM) mechanism for self‐assembled monolayers in near‐infrared organic photodetectors. The formation of zwitterions induces a strong electric field that significantly increases the work function of HTM‐coated indium tin oxide substrates. The devices exhibit low dark current and noise, along with high
Jiyoung Shin +9 more
wiley +1 more source

