Results 51 to 60 of about 29,046 (313)
Rainbow Trapping in Highly Doped Silicon Graded Grating Strip at the Terahertz Range
In this paper, we propose surface plasma polaritons (SPPs) propagating along the structure of grating grooves based on highly doped silicon, which exhibits better performance of exciting SPPs than metal at low frequency (e.g., microwaves, mid infrared ...
Yan Liu +8 more
doaj +1 more source
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai +8 more
wiley +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
In this work, flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga2O3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the ...
Zhe Li +10 more
doaj +1 more source
Modeling the optical constants of wide-bandgap materials [PDF]
ABSTRACT Calculations of the optical constants of hexagonal GaN (in the range 1-10 eV), InN (in the range 2-20 eV), A1N (in the range 6-20 eV) and 6H-SiC (in the range 1-30 eV) for the component perpendicular to the c axis are presented. Theemployed model is modified Adachi's model of the optical properties of semiconductors.
Djurisic, Aleksandra B +2 more
openaire +3 more sources
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang +11 more
doaj +1 more source
High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts.
Yangyang Gao +12 more
doaj +1 more source
Self‐assembled monolayers (SAMs) are promising hole‐transporting materials for organic photovoltaics (OPVs), but suffer from self‐aggregation and poor large‐area uniformity. We find that interfacial modification using nicotinic hydrazide can eliminate the residual SAM aggregates by forming energetically favorable complexes, yielding uniform SAM.
Seongwon Yoon +10 more
wiley +1 more source
Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in
Jiaduo Zhu +5 more
doaj +1 more source

