Results 21 to 30 of about 29,046 (313)

Plasma etching of wide bandgap and ultrawide bandgap semiconductors [PDF]

Journal of Vacuum Science & Technology A, 2020
The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies.
Stephen J. Pearton, Erica A. Douglas, Randy J. Shul, Fan Ren   +3 more
openaire   +1 more source

A Novel Method for Growing α-Ga₂O₃ Films Using Mist-CVD Face-to-face Heating Plates

Nanomaterials, 2022
In this paper, the method for growing α-Ga2O3 films on c-plane sapphire substrates using an inexpensive fine-channel mist-CVD face-to-face heating plate was investigated. Because high temperatures can result in reactor deformation, expensive AlN ceramics
Yan Zuo, Qian Feng, Tao Zhang, Xusheng Tian, Wenji Li, Jiale Li, Chunfu Zhang, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source

Comprehensive Comparison of MOCVD- and LPCVD-SiN_x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Micromachines, 2023
Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method.
Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao   +9 more
doaj   +1 more source

Linear Reconstruction Methods for Large Thick Aperture Imaging

MATEC Web of Conferences, 2018
Large thick aperture imaging method is proposed to measure the radiation intensity distribution of radiation source whose size is several centimetres. The new method contains two steps which are coded imaging and image reconstruction.
Yao Zhiming, Duan Baojun, Yan Weipeng, Song Yan, Han Changcai, Ma Jiming, Song Guzhou   +6 more
doaj   +1 more source

(In_xGa_1−x)₂O₃ Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

IEEE Photonics Journal, 2018
The (InxGa1−x)2O3 photodetectors were fabricated on the single-crystalline (InxGa1− x)2O3 films deposited on sapphire substrate by pulsed laser deposition.
Ke Zhang, Qian Feng, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability

Advanced Electronic Materials, 2023
Programmable devices can be easily switched between n‐type and p‐type devices by applying an electric field and are promising candidates for simplifying the currently used fabrication process and increasing programmable flexibility. This paper proposes a
Maolong Yang, Liming Wang, Yao Lu, Bo Wang, Ningning Zhang, Maliang Liu, Hui Guo, Dongdong Lin, Jincheng Zhang, Huiyong Hu   +9 more
doaj   +1 more source

Wide bandgap extrinsic photoconductive switches [PDF]

2007 16th IEEE International Pulsed Power Conference, 2007
Semi-insulating silicon carbide and gallium nitride are attractive materials for compact high-voltage photoconductive semiconductor switches (PCSSs) due to their large bandgap, high critical electric field strength, and high electron saturation velocity.
Sullivan, J S, Stanley, J R
openaire   +1 more source

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

IEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Hepeng Zhang, Shengrui Xu, Zhihong Liu, Hong Zhou, Yue Hao   +8 more
doaj   +1 more source

Suppressing the Back-Gating Effect of Normally-Off p-GaN Monolithic Bidirectional Switch on 6-Inch Sapphire for Compact Power Conversion Systems

IEEE Journal of the Electron Devices Society
In this work, normally-off p-GaN monolithic bidirectional switch (MBDS) with common-drain configuration on 6-inch sapphire has been successfully fabricated using CMOS-compatible process in our pilot line.
Junbo Wang, Xiangdong Li, Jian Ji, Xi Jiang, Song Yuan, Shuzhen You, Tao Zhang, Long Chen, Yue Hao, Jincheng Zhang   +9 more
doaj   +1 more source