Results 21 to 30 of about 93,816 (297)

Strain engineering and photocatalytic application of single-layer ReS$_2$ [PDF]

, 2017
We present a theoretical study on the electronic, dynamical, and photocatalytic properties of single-layer ReS$_2$ under uniaxial and shear strains. The single-layer ReS$_2$ shows strong anisotropic responses to straining.
Li, Yan-Ling, Li, Yunguo, Tang, Chunlin
core   +2 more sources

Wide bandgap composite EBG substrates

IEEE Transactions on Antennas and Propagation, 2003
High-K ceramics are embedded into a polymer host to create an electromagnetic bandgap (EBG) substrate that possess superior properties to previous bandgap implementations in terms of stopband width, attenuation per layer, and practicality. Ceramics are periodically spaced in a commercially-available, Teflon-based host to create a bandgap that spans ...
Chappell, William J., Gong, Xun
openaire   +3 more sources

Importance of Schottky barriers for wide-bandgap thermoelectric devices

, 2018
The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an ...
Battiato, Marco, Held, Karsten, Wais, Michael   +2 more
core   +1 more source

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

IEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Hepeng Zhang, Shengrui Xu, Zhihong Liu, Hong Zhou, Yue Hao   +8 more
doaj   +1 more source

Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase

, 2016
Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for ...
Celis, Arlensiú, Coati, Alessandro, Conrad, Edward, Conrad, Matthew, Garreau, Yves, Jinkins, Katherine, Miceli, Paul, Nair, Maya, Nevius, Meredith, Taleb-Ibrahim, Amina, Tejeda, Antonio, Vlad, Alina, Wang, Feng   +12 more
core   +2 more sources

2D Saturable Absorbers for Fibre Lasers [PDF]

, 2015
© 2015.Two-dimensional (2D) nanomaterials are an emergent and promising platform for future photonic and optoelectronic applications. Here, we review recent progress demonstrating the application of 2D nanomaterials as versatile, wideband saturable ...
Kelleher, E, Woodward, R
core   +2 more sources

Suppressing the Back-Gating Effect of Normally-Off p-GaN Monolithic Bidirectional Switch on 6-Inch Sapphire for Compact Power Conversion Systems

IEEE Journal of the Electron Devices Society
In this work, normally-off p-GaN monolithic bidirectional switch (MBDS) with common-drain configuration on 6-inch sapphire has been successfully fabricated using CMOS-compatible process in our pilot line.
Junbo Wang, Xiangdong Li, Jian Ji, Xi Jiang, Song Yuan, Shuzhen You, Tao Zhang, Long Chen, Yue Hao, Jincheng Zhang   +9 more
doaj   +1 more source

Self-assembled guanine ribbons as wide-bandgap semiconductors

, 2001
We present a first principle study about the stability and the electronic properties of a new biomolecular solid-state material, obtained by the self-assembling of guanine (G) molecules.
A. Calzolari, A. Garbesi, Becke, Braun, Dreizler, E. Molinari, Giese, Gottarelli, Jortner, Kelley, Kelley, Lee, Porath, Pugh, R. Di Felice, Rinaldi, Saenger, Schuster, Troullier, Ye, Šponer   +20 more
core   +1 more source

TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]

, 2018
Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools were originally developed for silicon and their performance and accuracy for wide bandgap ...
Antoniou, Marina, Arvanitopoulos, Anastasios, Lophitis, Neo, Perkins, Samuel   +3 more
core   +2 more sources

First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects

Results in Physics, 2017
In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations.
Xiaofan Ma, Yuming Zhang, Linpeng Dong, Renxu Jia   +3 more
doaj   +1 more source