Results 1 to 10 of about 24,282 (166)

Wide bandgap semiconductors [PDF]

Materials Today, 2007
With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry.
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Effect of defects on Q factors of single-crystal diamond MEMS resonators

Functional Diamond, 2023
A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors.
Zilong Zhang, Guo Chen, Keyun Gu, Satoshi Koizumi, Meiyong Liao   +4 more
doaj   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

Crystals, 2023
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the epilayers
Zhuorui Tang, Lin Gu, Hongping Ma, Kefeng Dai, Qian Luo, Nan Zhang, Jiyu Huang, Jiajie Fan   +7 more
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Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

Results in Physics, 2023
In this paper, a method of indium-tin oxide /Graphene /Indium-tin oxide (ITO/Gr/ITO) structure as transparent conductive layer (TCL) to improve the current spreading of ultraviolet light-emitting diodes (UV-LEDs) is reported.
Xiaomeng Fan, Shengrui Xu, Weiguo Liu, Hongchang Tao, Huake Su, Linlin Hu, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates

Crystals, 2022
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor.
Zhuorui Tang, Lin Gu, Hongping Ma, Chaobin Mao, Sanzhong Wu, Nan Zhang, Jiyu Huang, Jiajie Fan   +7 more
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High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition

Nano Select, 2021
Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap.
Yu Xu, Yaolin Cheng, Zhe Li, Qian Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao   +9 more
doaj   +1 more source

Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

Applied Sciences, 2023
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs).
Zeyulin Zhang, Yanshuang Ba, Dazheng Chen, Pengru Yan, Qingwen Song, Yuming Zhang, Weidong Zhu, Chunfu Zhang, Yue Hao   +8 more
doaj   +1 more source

A Novel Method for Growing α-Ga₂O₃ Films Using Mist-CVD Face-to-face Heating Plates

Nanomaterials, 2022
In this paper, the method for growing α-Ga2O3 films on c-plane sapphire substrates using an inexpensive fine-channel mist-CVD face-to-face heating plate was investigated. Because high temperatures can result in reactor deformation, expensive AlN ceramics
Yan Zuo, Qian Feng, Tao Zhang, Xusheng Tian, Wenji Li, Jiale Li, Chunfu Zhang, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source

Plasma etching of wide bandgap and ultrawide bandgap semiconductors [PDF]

Journal of Vacuum Science & Technology A, 2020
The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies.
Stephen J. Pearton, Erica A. Douglas, Randy J. Shul, Fan Ren   +3 more
openaire   +1 more source