Results 11 to 20 of about 29,046 (313)

Wide bandgap semiconductors [PDF]

open access: yesMaterials Today, 2007
With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry.
  +7 more sources

Effect of defects on Q factors of single-crystal diamond MEMS resonators

open access: yesFunctional Diamond, 2023
A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors.
Zilong Zhang   +4 more
doaj   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

open access: yesMicromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han   +10 more
doaj   +1 more source

Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

open access: yesApplied Sciences, 2023
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs).
Zeyulin Zhang   +8 more
doaj   +1 more source

Organic Interlayer for Enhanced Buried Interfaces in Wide‐Bandgap Perovskite Solar Cells [PDF]

open access: bronzeChemSusChem
JeeHee Hong   +5 more
openalex   +2 more sources

Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

open access: yesCrystals, 2023
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the epilayers
Zhuorui Tang   +7 more
doaj   +1 more source

Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

open access: yesResults in Physics, 2023
In this paper, a method of indium-tin oxide /Graphene /Indium-tin oxide (ITO/Gr/ITO) structure as transparent conductive layer (TCL) to improve the current spreading of ultraviolet light-emitting diodes (UV-LEDs) is reported.
Xiaomeng Fan   +7 more
doaj   +1 more source

Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates

open access: yesCrystals, 2022
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor.
Zhuorui Tang   +7 more
doaj   +1 more source

High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition

open access: yesNano Select, 2021
Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap.
Yu Xu   +9 more
doaj   +1 more source

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