Results 11 to 20 of about 93,816 (297)

Comprehensive Comparison of MOCVD- and LPCVD-SiN_x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Micromachines, 2023
Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method.
Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao   +9 more
doaj   +1 more source

Linear Reconstruction Methods for Large Thick Aperture Imaging

MATEC Web of Conferences, 2018
Large thick aperture imaging method is proposed to measure the radiation intensity distribution of radiation source whose size is several centimetres. The new method contains two steps which are coded imaging and image reconstruction.
Yao Zhiming, Duan Baojun, Yan Weipeng, Song Yan, Han Changcai, Ma Jiming, Song Guzhou   +6 more
doaj   +1 more source

(In_xGa_1−x)₂O₃ Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

IEEE Photonics Journal, 2018
The (InxGa1−x)2O3 photodetectors were fabricated on the single-crystalline (InxGa1− x)2O3 films deposited on sapphire substrate by pulsed laser deposition.
Ke Zhang, Qian Feng, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability

Advanced Electronic Materials, 2023
Programmable devices can be easily switched between n‐type and p‐type devices by applying an electric field and are promising candidates for simplifying the currently used fabrication process and increasing programmable flexibility. This paper proposes a
Maolong Yang, Liming Wang, Yao Lu, Bo Wang, Ningning Zhang, Maliang Liu, Hui Guo, Dongdong Lin, Jincheng Zhang, Huiyong Hu   +9 more
doaj   +1 more source

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design [PDF]

, 2010
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary
Albert, Cao, Yu, Fay, Patrick, Ganguly, Satyaki, Goodman, Kevin, Jena, Debdeep, Karda, Kamal, Kosel, Thomas, Li, Guowang, Lian, Chuanxin, Protasenko, Vladimir, Simon, John, Verma, Jai, Wang, Xing, Huili   +14 more
core   +1 more source

Plasma etching of wide bandgap and ultrawide bandgap semiconductors [PDF]

Journal of Vacuum Science & Technology A, 2020
The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies.
Stephen J. Pearton, Erica A. Douglas, Randy J. Shul, Fan Ren   +3 more
openaire   +1 more source

Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors

, 2019
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing.
Fedyanin, Dmitry Yu., Khramtsov, Igor A.
core   +1 more source

Photonic molecules for improving the optical response of macroporous silicon photonic crystals for gas sensing purposes [PDF]

, 2018
In this paper, we report the benefits of working with photonic molecules in macroporous silicon photonic crystals. In particular, we theoretically and experimentally demonstrate that the optical properties of a resonant peak produced by a single photonic
Cardador Maza, David, Rodríguez Martínez, Ángel, Segura García, Daniel   +2 more
core   +2 more sources

Multilayer black phosphorus as broadband saturable absorber for pulsed lasers from 1 to 2.7 {\mu}m wavelength

, 2015
It attracts wide interest to seek universe saturable absorber covering wavelengths from near infrared to mid-infrared band. Multilayer black phosphorus, with variable direct bandgap (0.3-2 eV) depending on the layer number, becomes a good alternative as ...
Guo, Zhinan, Kong, Lingchen, Qian, Liejia, Qin, Zhipeng, Xie, Guoqiang, Yuan, Peng, Zhang, Han   +6 more
core   +1 more source