Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors [PDF]
NanomaterialsWe systematically investigate the combined impact of process variation effects (PVEs), metal gate work function fluctuation (WKF), and random dopant fluctuation (RDF) on the key electrical characteristics of sub-1-nm technology node gate-all-around ...
Sekhar Reddy Kola, Yiming Li
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Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods [PDF]
IEEE Journal of the Electron Devices Society, 2021 In this article, the work-function fluctuation (WKF) of nanosized metal grains is estimated and compared with the cuboid and Voronoi methods for 10-nm-gate gate-all-around silicon nanowire n-MOSFETs.
Wen-Li Sung, Ya-Shu Yang, Yiming Li
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A Nanosized-Metal-Grain Pattern-Dependent Threshold Voltage Model for the Work Function Fluctuation of GAA Si NW MOSFETs [PDF]
IEEE Access, 2021 To estimate characteristic fluctuation of emerging devices, three-dimensional device simulation has been performed intensively for various random cases; however, it strongly relies on huge computational resources.
Wen-Li Sung, Yiming Li
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Deep Learning Algorithms for the Work Function Fluctuation of Random Nanosized Metal Grains on Gate-All-Around Silicon Nanowire MOSFETs [PDF]
IEEE Access, 2021 Device simulation has been explored and industrialized for over 40 years; however, it still requires huge computational cost. Therefore, it can be further advanced using deep learning (DL) algorithms.
Chandni Akbar, Yiming Li, Wen-Li Sung
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Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects [PDF]
IEEE Transactions on Electron Devices, 2017 A new technique developed for the analysis of intrinsic sources of variability affecting the performance of semiconductor devices is presented. It is based on the creation of a fluctuation sensitivity map (FSM), which supplies spatial information about the source of variability affecting the device performance and reliability, providing useful advice ...
Karol Kalna
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Single molecule Raman spectroscopy and local work function fluctuations [PDF]
Israel Journal of Chemistry, 2004 AbstractSingle molecule Raman spectroscopy provides information on individual molecules with vibrationalâlevel resolution. The unique mechanisms leading to the huge Raman crossâsection enhancement necessary for single molecule sensitivity are under intense investigation in several laboratories.
Gilad Haran
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Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies [PDF]
IEEE Transactions on Electron Devices, 2010 This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits.
Yiming Li +3 more
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Jarzynski Equality for Driven Quantum Field Theories [PDF]
Physical Review X, 2018 The fluctuation theorems, and in particular, the Jarzynski equality, are the most important pillars of modern nonequilibrium statistical mechanics.
Anthony Bartolotta, Sebastian Deffner
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IEEE Access, 2022 The sensitivity of semiconductor devices to any microscopic perturbation is increasing with the continuous shrinking of device technology. Even the small fluctuations have become more acute for highly scaled nano-devices.
Rajat Butola +2 more
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Modeling and optimization of the delivery fluctuation of gear pumps [PDF]
MATEC Web of Conferences, 2019 Presented work aims to minimize the delivery fluctuation of a gear pump through geometrical optimisation of the tooth flank. Therefore, instead of examining various configurations, which would reduce the flow ripple ad hoc, the current study suggests the
Tsolakis Efstratios +5 more
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