Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors [PDF]
NanomaterialsWe systematically investigate the combined impact of process variation effects (PVEs), metal gate work function fluctuation (WKF), and random dopant fluctuation (RDF) on the key electrical characteristics of sub-1-nm technology node gate-all-around ...
Sekhar Reddy Kola, Yiming Li
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A Nanosized-Metal-Grain Pattern-Dependent Threshold Voltage Model for the Work Function Fluctuation of GAA Si NW MOSFETs [PDF]
IEEE Access, 2021 To estimate characteristic fluctuation of emerging devices, three-dimensional device simulation has been performed intensively for various random cases; however, it strongly relies on huge computational resources.
Wen-Li Sung, Yiming Li
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Deep Learning Algorithms for the Work Function Fluctuation of Random Nanosized Metal Grains on Gate-All-Around Silicon Nanowire MOSFETs [PDF]
IEEE Access, 2021 Device simulation has been explored and industrialized for over 40 years; however, it still requires huge computational cost. Therefore, it can be further advanced using deep learning (DL) algorithms.
Chandni Akbar, Yiming Li, Wen-Li Sung
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Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods [PDF]
IEEE Journal of the Electron Devices Society, 2021 In this article, the work-function fluctuation (WKF) of nanosized metal grains is estimated and compared with the cuboid and Voronoi methods for 10-nm-gate gate-all-around silicon nanowire n-MOSFETs.
Wen-Li Sung, Ya-Shu Yang, Yiming Li
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Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies [PDF]
IEEE Transactions on Electron Devices, 2010 This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits.
Yiming Li +2 more
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IEEE Access, 2022 The sensitivity of semiconductor devices to any microscopic perturbation is increasing with the continuous shrinking of device technology. Even the small fluctuations have become more acute for highly scaled nano-devices.
Rajat Butola +2 more
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Modeling and optimization of the delivery fluctuation of gear pumps [PDF]
MATEC Web of Conferences, 2019 Presented work aims to minimize the delivery fluctuation of a gear pump through geometrical optimisation of the tooth flank. Therefore, instead of examining various configurations, which would reduce the flow ripple ad hoc, the current study suggests the
Tsolakis Efstratios +5 more
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IEEE Access, 2020 In conventional hybrid reversible data hiding in encrypted images (RDHEI), the error-free extracted-bit rate condition in recovered images cannot be fully achieved (reversible) as the block size decreases because of the fluctuation function used, which ...
Gunawan Wibisono +3 more
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Quantum Thermodynamic Uncertainties in Nonequilibrium Systems from Robertson-Schrödinger Relations
Entropy, 2022 Thermodynamic uncertainty principles make up one of the few rare anchors in the largely uncharted waters of nonequilibrium systems, the fluctuation theorems being the more familiar.
Hang Dong +3 more
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Foliated asymptotically safe gravity in the fluctuation approach
Journal of High Energy Physics, 2023 The gravitational asymptotic safety program envisions a high-energy completion of gravity based on a non-Gaussian renormalization group fixed point. A key step in this program is the transition from Euclidean to Lorentzian signature spacetimes.
Frank Saueressig, Jian Wang
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