Results 231 to 240 of about 554,369 (294)

Multi-source harmonic estimation method for distribution networks based on variational modal decomposition. [PDF]

PLoS One
Zuo H, Xu H, Wang Z, Yu Z, Wu Z.
europepmc   +1 more source

The Cerebrovascular Reactivity Adjusted Fractional Amplitude of Low-Frequency Fluctuations Abnormalities in Middle Cerebral Artery Stenosis and Occlusive Disease. [PDF]

Transl Stroke Res
Zhang L, Wang L, Tang X, Zhu Y, Wang R, Ding Z.   +5 more
europepmc   +1 more source

Theoretical investigation of protein functions related to electron and ion transports working in thermal fluctuation

Theoretical investigation of protein functions related to electron and ion transports working in thermal fluctuation
openaire  

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

IEEE Transactions on Electron Devices, 2021
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML model, the random forest regressor (RFR) is explored to predict the characteristic variation of the explored device. The proposed ML-RFR algorithm for predicting the ${I} _{
Chandni Akbar, Yiming Li, Wen Li Sung
exaly   +4 more sources

Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs

International Journal of Nanotechnology, 2014
In this paper, we, for the first time, study the metal gate's work-function-fluctuation-induced variability in the 16-nm-gate bulk and silicon on insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. According to metal's property, random nanosized grains of titanium nitride (TiN) gate
Yiming Li, Chieh Yang Chen, Yu Yu Chen
exaly   +6 more sources

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius.
Yasuhito Gotoh, Hiroshi Tsuji, J. Ishikawa   +2 more
exaly   +4 more sources

Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors

Computers and Electrical Engineering, 2022
Chandni Akbar, Yiming Li, Wen-Li Sung
exaly   +4 more sources

Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019
We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage $(\mathrm{V}_{\mathrm{t}\mathrm{h}})$ induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-all-around (GAA) nanowire (NW)
Wen-Li Sung, Min-Hui Chuang, Yiming Li
openalex   +2 more sources