Results 251 to 260 of about 554,369 (294)

Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010
The work-function fluctuation (WKF) induced threshold voltage variability (σV th ) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of ...
Chih‐Hong Hwang, Yiming Li
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Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation

2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023
Bernardo Borges Sandoval, Leonardo H. Brendler, Fernanda Lima Kastensmidt, Ricardo Reis, Alexandra L. Zimpeck, Rafael B. Schvittz, Cristina Meinhardt   +6 more
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Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 IEEE International Electron Devices Meeting (IEDM), 2015
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied.
Yiming Li, Han-Tung Chang, Chun-Ning Lai, Pei-Jung Chao, Chieh-Yang Chen   +4 more
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Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-k-metal-gate material

2010 14th International Workshop on Computational Electronics, 2010
Random work-function (WK) induced threshold voltage fluctuation (σV th ) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are studied ...
Hui-Wen Cheng, Yiming Li
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Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022
Chandni Akbar, Yiming Li, Wen-Li Sung
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Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

Japanese Journal of Applied Physics, 2014
Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, S. O’uchi, Wataru Mizubayashi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara   +11 more
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3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

2010 International Electron Devices Meeting, 2010
Hui-Wen Cheng, Fuhai Li, Ming-Hung Han, Chun-Yen Yiu, Chia-Hui Yu, Kuo-Fu Lee, Yiming Li   +6 more
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Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes

IEEE Transactions on Electron Devices, 2021
Narasimhulu Thoti, Yiming Li, Wen-Li Sung   +2 more
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A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022
Wen-Li Sung, Yiming Li
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Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022
Rajat Butola, Yiming Li, Sekhar Reddy Kola   +2 more
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