Results 251 to 260 of about 120,440 (291)

Implications of Work-Function Fluctuation on Radiation Robustness of FinFET XOR Circuits

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017
Traditional CMOS technology has reached its limit in the deep submicron era. Hence, advanced technology nodes require novel device structures and new materials to overcome the challenges faced when dealing with planar devices for nanocircuits. As technology scales down, the circuits are becoming more susceptible to the increase of the uncertainty ...
Y. Q. Aguiar, F. L. Kastensmidt, C. Meinhardt, L. Artola, G. Hubert, R. Reis   +5 more
openaire   +1 more source

SET response of FinFET-based majority voter circuits under work-function fluctuation

2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017
This work evaluates the SET response of FinFET-based Majority Voter circuits under the process-variability impact of metal-gate Work-Function Fluctuation (WFF). Results show that SET pulsewidth is expected to increase under WFF effects. Moreover, results show that the relative standard deviation of the SET pulses can increase from 50% up to 80 ...
Y. Q. de Aguiar, Fernanda Lima Kastensmidt, Cristina Meinhardt, Ricardo A. L. Reis   +3 more
openaire   +1 more source

Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method

Semiconductor Science and Technology, 2022
Abstract In this paper, a comparative study on process variability considering work function variation (WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial layer tunnel field effect transistor (TFET) with SiGe source (SiGe-ETLTFET) is statistically analyzed using impedance field method (IFM) in ...
Radhe Gobinda Debnath, Srimanta Baishya
openaire   +1 more source

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

IEEE Transactions on Electron Devices, 2021
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML model, the random forest regressor (RFR) is explored to predict the characteristic variation of the explored device. The proposed ML-RFR algorithm for predicting the ${I} _{
Chandni Akbar, Yiming Li, Wen Li Sung
openaire   +1 more source

Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010
The work-function fluctuation (WKF) induced threshold voltage variability (σV th ) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of ...
Chih-Hong Hwang, Yiming Li
openaire   +1 more source

Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Journal of Nanoscience and Nanotechnology, 2012
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach.
Yiming, Li, Hui-Wen, Cheng, Chi-Hong, Hwang   +2 more
openaire   +2 more sources

Neurofunctional basis of work-related risk propensity: Evidence from fractional amplitude of low-frequency fluctuations and functional connectivity analyses

Personality and Individual Differences, 2021
Abstract Work-related risk propensity (WRP), refers to an individual's risk-taking tendencies at the workplace, has been widely recognized as an essential predictor for individual performance. However, the neurofunctional substrates of WRP remain unclear. To fill this gap, we combined the fractional amplitude of low-frequency fluctuations (fALFF) and
Zhengqiang Zhong, Han Ren, Fumin Deng
openaire   +1 more source

Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs

2017
This paper considers gate capacitance fluctuation due to work-function variation (WFV) in metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist correlations between gate trans-capacitance variations. Also, an analytical statistical model is presented to capture total gate capacitance variation based on the ...
Wei-feng Lü, Mi Lin, Haipeng Zhang 0003
openaire   +1 more source

Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation

IEEE Transactions on Semiconductor Manufacturing, 2012
In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
openaire   +1 more source

Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

Semiconductor Science and Technology, 2020
Abstract In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM).
Min Soo Bae, Ilgu Yun
openaire   +1 more source