Results 241 to 250 of about 120,440 (291)

Fluctuation analysis of work function of organic semiconductors

Collection of Czechoslovak Chemical Communications, 2011
We demonstrate, for the first time, work function fluctuations of a polyaniline film when used as the gate conductor of an insulated-gate field-effect transistor. The work function fluctuations induce drain current fluctuations, which are in excess of the channel noise of the transistor and the Nyquist noise of the polyaniline film.
Ryan M. West, Colby R. Watts, Mira Josowicz, Jiří Janata   +3 more
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Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs

International Journal of Nanotechnology, 2014
In this paper, we, for the first time, study the metal gate's work-function-fluctuation-induced variability in the 16-nm-gate bulk and silicon on insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. According to metal's property, random nanosized grains of titanium nitride (TiN) gate
Yiming Li, Chieh-Yang Chen, Yu-Yu Chen   +2 more
exaly   +4 more sources

Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects [PDF]

IEEE Transactions on Electron Devices, 2017
A new technique developed for the analysis of intrinsic sources of variability affecting the performance of semiconductor devices is presented. It is based on the creation of a fluctuation sensitivity map (FSM), which supplies spatial information about the source of variability affecting the device performance and reliability, providing useful advice ...
Guillermo Indalecio, Natalia Seoane, Karol Kalna, Antonio J. Garcia-Loureiro   +3 more
core   +4 more sources

Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019
We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage $(\mathrm{V}_{\mathrm{t}\mathrm{h}})$ induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-all-around (GAA) nanowire (NW)
Wen-Li Sung, Min-Hui Chuang, Yiming Li   +2 more
exaly   +2 more sources

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 IEEE International Electron Devices Meeting (IEDM), 2015
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied.
Yiming Li, Chieh-Yang Chen
exaly   +2 more sources

Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014
Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV.
Shinji Migita
exaly   +2 more sources

A New Modeling Approach for the Probability Density Distribution Function of Wind power Fluctuation

Sustainability, 2019
With the rapid development of grid-connected wind power, analysing and describing the probability density distribution characteristics of wind power fluctuation has always been a hot and difficult problem in the wind power field.
Fucai Qian, Wang Lingzhi
exaly   +2 more sources

Work-Function Fluctuation Impact on the SET Response of FinFET-based Majority Voters

2020 IEEE Latin-American Test Symposium (LATS), 2020
The evolution of integrated circuits, alongside the technology scaling, has made them more susceptible to the radiation effects, as well presenting an increasing manufacturing process variability. These challenges can lead to circuits operating outside their specification ranges. Majority voters are adopted by most of the redundancy-based methodologies
Leonardo Heitich Brendler, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis   +3 more
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Impact of Work Function Fluctuations on Threshold Voltage Variability in a Nanoscale FinFETs

2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS), 2016
In todays advanced nanoscale regime, use of metal gate stacks have a different impact on the intrinsic parameter variability. The metal gates have a natural granular structure, where work function of each grain depends upon its orientation. Circuit and device designing are limited by the threshold voltage variability.
Rituraj Singh Rathore, Rajneesh Sharma, Ashwani K. Rana   +2 more
openaire   +1 more source

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius.
Gotoh, Y, Tsuji, H, Ishikawa, J
openaire   +1 more source