Results 241 to 250 of about 554,369 (294)
IEEE Transactions on Semiconductor Manufacturing, 2011 In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
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Fluctuation analysis of work function of organic semiconductors
Collection of Czechoslovak Chemical Communications, 2011 We demonstrate, for the first time, work function fluctuations of a polyaniline film when used as the gate conductor of an insulated-gate field-effect transistor. The work function fluctuations induce drain current fluctuations, which are in excess of the channel noise of the transistor and the Nyquist noise of the polyaniline film.
Ryan M. West +3 more
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SET response of FinFET-based majority voter circuits under work-function fluctuation
2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017 This work evaluates the SET response of FinFET-based Majority Voter circuits under the process-variability impact of metal-gate Work-Function Fluctuation (WFF). Results show that SET pulsewidth is expected to increase under WFF effects. Moreover, results show that the relative standard deviation of the SET pulses can increase from 50% up to 80 ...
Ygor Quadros de Aguiar +3 more
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Work-Function Fluctuation Impact on the SET Response of FinFET-based Majority Voters
2020 IEEE Latin-American Test Symposium (LATS), 2020 The evolution of integrated circuits, alongside the technology scaling, has made them more susceptible to the radiation effects, as well presenting an increasing manufacturing process variability. These challenges can lead to circuits operating outside their specification ranges. Majority voters are adopted by most of the redundancy-based methodologies
Leonardo H. Brendler +3 more
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Impact of Work Function Fluctuations on Threshold Voltage Variability in a Nanoscale FinFETs
2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS), 2016 In todays advanced nanoscale regime, use of metal gate stacks have a different impact on the intrinsic parameter variability. The metal gates have a natural granular structure, where work function of each grain depends upon its orientation. Circuit and device designing are limited by the threshold voltage variability.
Rituraj Singh Rathore +2 more
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Implications of Work-Function Fluctuation on Radiation Robustness of FinFET XOR Circuits
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017 Traditional CMOS technology has reached its limit in the deep submicron era. Hence, advanced technology nodes require novel device structures and new materials to overcome the challenges faced when dealing with planar devices for nanocircuits. As technology scales down, the circuits are becoming more susceptible to the increase of the uncertainty ...
Ygor Quadros de Aguiar +5 more
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Semiconductor Science and Technology, 2022 Abstract In this paper, a comparative study on process variability considering work function variation (WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial layer tunnel field effect transistor (TFET) with SiGe source (SiGe-ETLTFET) is statistically analyzed using impedance field method (IFM) in ...
Radhe Gobinda Debnath, Srimanta Baishya
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Semiconductor Science and Technology, 2020 In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM). Effects of doping concentration, gate metal grain-related parameters, and device parameter scaling on RDF, WFV, and
Min Soo Bae, Ilgu Yun
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, 2013 One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
Emanuele Baravelli
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2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010 The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
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