Results 261 to 270 of about 554,369 (294)

Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit

2011 3rd Asia Symposium on Quality Electronic Design (ASQED), 2011
Hui-Wen Cheng, Yiming Li
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Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2010
Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee   +2 more
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Transfer learning approach to modeling multichannel gate-all-around nanosheet field-effect transistors under work function fluctuations

Engineering Applications of Artificial Intelligence
Sagarika Dash, Yiming Li
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Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Journal of Nanoelectronics and Optoelectronics, 2019
Weifeng Lü, Liang Dai, Guangyi Wang, Mi Lin   +3 more
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Neurofunctional basis of work-related risk propensity: Evidence from fractional amplitude of low-frequency fluctuations and functional connectivity analyses

Personality and Individual Differences, 2021
Abstract Work-related risk propensity (WRP), refers to an individual's risk-taking tendencies at the workplace, has been widely recognized as an essential predictor for individual performance. However, the neurofunctional substrates of WRP remain unclear. To fill this gap, we combined the fractional amplitude of low-frequency fluctuations (fALFF) and
Zhengqiang Zhong, Han Ren, Fumin Deng
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Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Journal of Nanoscience and Nanotechnology, 2012
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach.
Yiming, Li, Hui-Wen, Cheng, Chi-Hong, Hwang   +2 more
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Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2015
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, H. Yamauchi, Yasuaki Ishikawa, S. O’uchi, Wataru Mizubayashi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara   +11 more
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Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014
Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV.
T. Matsukawa, K. Fukuda, Y.X. Liu, K. Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, M. Masahara   +12 more
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Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs

2017
This paper considers gate capacitance fluctuation due to work-function variation (WFV) in metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist correlations between gate trans-capacitance variations. Also, an analytical statistical model is presented to capture total gate capacitance variation based on the ...
Lü Wei-Feng, Lin Mi, Zhang Hai-peng
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Impact of Channel Doping Fluctuation and Metal Gate Work Function Variation in FD-SOI MOSFET for 5nm BOX Thickness

2019 IEEE Conference on Information and Communication Technology, 2019
This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey, Pratosh K. Pal, Vikrant Varshney, Ankur Kumar, R. K. Nagaria   +4 more
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