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2019 IEEE Conference on Information and Communication Technology, 2019
This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
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This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
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IEEE Electron Device Letters, 2016
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
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This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
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2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
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The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
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2013
One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
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One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
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Japanese Journal of Applied Physics, 2014
Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa +11 more
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Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa +11 more
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2010 14th International Workshop on Computational Electronics, 2010
Random work-function (WK) induced threshold voltage fluctuation (σV th ) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are studied ...
Hui-Wen Cheng, Yiming Li
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Random work-function (WK) induced threshold voltage fluctuation (σV th ) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are studied ...
Hui-Wen Cheng, Yiming Li
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Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023Bernardo Borges Sandoval +6 more
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Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes
IEEE Transactions on Electron Devices, 2022Narasimhulu Thoti +2 more
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