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Effects of Device Scaling on the Performance of Junctionless FinFETs Due to Gate-Metal Work Function Variability and Random Dopant Fluctuations

IEEE Electron Device Letters, 2016
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
openaire   +1 more source

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010
Chia-Hui Yu   +5 more
openaire   +1 more source

Work as an external quantum observable and an operational quantum work fluctuation theorem

Physical Review Research, 2020
Konstantin Beyer   +2 more
exaly  

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