Results 71 to 80 of about 29,896 (261)

Precise analysis and proper application of X-ray absorption spectroscopy

open access: yesCatal
X-ray absorption spectroscopy (XAS) based on synchrotron radiation is element selective tool which is highly sensitive to oxidation states, spin states, and local environments.
Hao Zhang   +6 more
doaj   +1 more source

Electronic structures of GaAs/AlxGa1-xAs quantum double

open access: yes, 2006
In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings(QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ...
Xia JB (Xia Jian-Bai)   +2 more
core  

Decoding Synergistic Pathways in Bimetallic MOFs for Advanced Oxidation Processes

open access: yesAdvanced Materials, EarlyView.
This review presents a unified framework linking metal pairing and framework design with electronic structure, redox cycling, oxidant activation, reactive‐species generation, and catalytic performance across photocatalytic and oxidant‐based BMOF‐AOPs. The resulting design principles guide the development of hydrolytically stable and efficient BMOFs for
Karim El‐Naggar   +2 more
wiley   +1 more source

Operando Synchrotron X‐Ray Absorption Spectroscopy: A Key Tool for Cathode Material Studies in Next‐Generation Batteries

open access: yesAdvanced Science
Rechargeable batteries are central to modern energy storage systems, from portable electronics to electric vehicles. The cathode material, a critical component, largely dictates a battery's energy density, capacity, and overall performance.
Yameng Fan   +6 more
doaj   +1 more source

Iterative Bragg peak removal on X-ray absorption spectra with automatic intensity correction

open access: yesJournal of Synchrotron Radiation
This study introduces a novel iterative Bragg peak removal with automatic intensity correction (IBR-AIC) methodology for X-ray absorption spectroscopy (XAS), specifically addressing the challenge of Bragg peak interference in the analysis of crystalline ...
Ryuichi Shimogawa   +6 more
doaj   +1 more source

Micro-spectroscopic investigation of selenium-bearing minerals from the Western US Phosphate Resource Area

open access: yesGeochemical Transactions, 2005
Mining activities in the US Western Phosphate Resource Area (WPRA) have released Se into the environment. Selenium has several different oxidation states and species, each having varying degrees of solubility, reactivity, and bioavailability.
Gunter Mickey E   +5 more
doaj   +1 more source

Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)

open access: yes, 2001
InAs and InxGa1-xAs (x = 0.2 and 0.5) self-organized quantum dots (QDs) were fabricated on GaAs(0 0 1) by molecular beam epitaxy (MBE) and characterized by atomic force microscopy (AFM), transmission electron microscopy (TEM), acid photoluminescence ...
Lin F,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.   +5 more
core  

MOCVD AlxGa1−xAs solar cells

open access: yes, 1986
MOCVD AlxGa1−xAs solar cells are reviewed. A summary status report of the past three year's research is presented. Status of the MOCVD crystal growth technology in relation to the optimization of the AlxGa1−xAs solar cells is assessed.
Prakash, Hari
core   +1 more source

Bifunctional Catalysis Drives Efficient and Ethanol‐Producing Aqueous Zn‐CO2 Batteries

open access: yesAdvanced Materials, EarlyView.
A unified bifunctional catalyst breaks the trade‐off between CO2 reduction and O2 evolution, delivering high efficiency, ethanol production, and long‐term stability in Zn‐CO2 batteries while revealing degradation pathways for next‐generation bifunctional electrocatalysts.
Divyani Gupta   +9 more
wiley   +1 more source

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

open access: yesCumhuriyet Science Journal
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj   +1 more source

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