Results 81 to 90 of about 29,896 (261)

Optical and structural properties of anodized AlxGa1-xAs layers

, 1997
The optical and structural properties of anodized AlxGa1-xAs films were investigated by using optical reflectance, X-ray photoemission and Auger electron spectroscopy (XPS and AES).
Xiang XB CHINESE ACAD SCIINST SEMICONDLAB SEMICOND MAT SCIBEIJING 100864PEOPLES R CHINA., Du WH, Xiang XB, Chang SL, Liao XB   +4 more
core  

Atom–Cluster Synergy in Scalable Fe–Ru Dual‐Site Architectures Accelerates Alkaline Hydrogen Evolution

Advanced Materials, EarlyView.
A mechanochemically synthesized dual‐site electrocatalyst (RuNC@Fe1NC) accelerates alkaline hydrogen evolution via atomic‐level spatial decoupling. Oxophilic Fe single atoms effectively dissociate water, while adjacent Ru nanoclusters rapidly recombine hydrogen.
Jae‐Hoon Baek, Seong Hyeon Kweon, Sun Gwan Cha, Se Jung Lee, Jinwoo Baek, Dong Hyeok Kwon, Hojeong Lee, Youngkook Kwon, Sang Kyu Kwak, Jong‐Beom Baek   +9 more
wiley   +1 more source

Arsenic mineral and compound data as analyzed by X-ray absorption spectroscopy and X-ray diffraction

Data in Brief
Here, we present As K-edge X-ray absorption spectroscopy (XAS) data for 28 arsenic minerals and compounds. These minerals and compounds were obtained from mineral dealers, museum collections, and chemical suppliers, and were positively identified by ...
Valerie A. Schoepfer, Heather E. Jamieson, Matthew B.J. Lindsay   +2 more
doaj   +1 more source

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

AIP Advances, 2017
We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many ...
Liang Zhao, Xiangdong Ding, Jingjuan Li, Shen Yang, Lei Zhao, Zuoxing Guo   +5 more
doaj   +1 more source

Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs [PDF]

, 1987
This letter reports the successful molecular beam epitaxial growth of high‐quality InxGa1−xAs/InxAl1−xAs directly on GaAs. In situ observation of dynamic high‐energy electron diffraction oscillations during growth of InxGa1−xAs on GaAs indicates that the
Jasprit Singh, Bhattacharya, Pallab K., Singh, Jasprit, Pallab K. Bhattacharya, Chang, Kevin H., Kevin H. Chang, Berger, Paul R., Paul R. Berger   +7 more
core   +1 more source

A Cu2S/NiOOH Heterojunction Enables Highly Selective Ammonia‐to‐Nitrite Electrooxidation at Industrially Relevant Current Densities

Advanced Materials, EarlyView.
Cu2S/NiOOH heterojunction enables efficient ammonia electrooxidation coupled with hydrogen evolution. Interfacial electronic modulation of Ni sites promotes selective NH3‐to‐NO2− electrooxidation at high current density. In a membrane electrode assembly, Cu2S/NiOOH maintains over 90% Faradaic efficiency of nitrite at 800 mA cm−2, highlighting its ...
Ke Wang, Hongzhe Anna Xu, Xin Mao, Xuefei Wang, Min Zheng, Chun‐Chuan Kao, Limei Yang, Jiashu Wang, Boming Sun, Shokoofeh Varshooy, Aijun Du, Qi‐Long Zhu, Jian Liu, Zhenguo Huang   +13 more
wiley   +1 more source

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Scientific Reports
Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation.
Olga Khvostikova, Alexey Vlasov, Boris Ber, Roman Salii, Vladimir Khvostikov   +4 more
doaj   +1 more source

Energy-synchronized X-ray absorption spectroscopy photoemission electron microscopy at Shanghai Synchrotron Radiation Facility (SSRF) for materials science

Journal of Synchrotron Radiation
This study develops an integrated X-ray absorption spectroscopy (XAS) photoemission electron microscopy (PEEM) platform on beamline BL09U at the Shanghai Synchrotron Radiation Facility (SSRF), enabling nanoscale characterization of complex materials ...
Junqin Li, Guanhua Zhang, Julong Sun, Zilong Zhao, Ying Zou, Zhenhua Chen, Fangyuan Zhu, Yaobo Huang, Yong Wang, Zefeng Ren, Renzhong Tai, Xueming Yang   +11 more
doaj   +1 more source

PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE

, 1992
The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding to
CHEN ZG, ANDERSSON TG, LI GH, LI GH ACAD SINICAINST SEMICONDNATL LAB SEMICOND SUPERLATTICES & MICROSTRUCTPOB 912BEIJING 100083PEOPLES R CHINA, WANG ZP, ZHENG BZ, HAN HX   +6 more
core  

X-ray absorption spectroscopy (XAS): XANES and EXAFS

, 2023
In this chapter, we review recent developments in the application of operando X-ray absorption spectroscopy (XAS) and look forward to how the outcomes of present synchrotron upgrades might extend, enhance, or otherwise affect such studies.
Newton, Mark A. (author), Zimmermann, Patric (author), van Bokhoven, Jeroen A. (author)   +2 more
core   +1 more source