Results 81 to 90 of about 24,619 (304)

Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots

, 2008
In this paper, how the dots' radius, At concentration and external electric field affect the single electron energy states in GaAs/AlxGa1-xAs spherical quantum dots are discussed in detail. Furthermore, the modification of the energy states is calculated
Wang, CD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: sirwangdao@sina.com, Wang, CD   +1 more
core  

Interfacial Acid Sites‐Mediated ZnO‐Based Electrocatalysts for Sustainable Dual‐Pathway H2O2 Production and Rechargeable Zn‐H2O2 Electrochemical Cell

Advanced Materials, EarlyView.
In this work, a synergistic strategy introduces interfacial acid sites, oxygen vacancies, and built‐in electric field into ZnSe/ZnO heterojunction to optimize its electronic structure and electrode micro‐environment. This overcomes sluggish oxygen reduction reaction kinetics and low H2O2 selectivity, achieving record H2O2 productivity (754.4 M gcat−1 ...
Lijun Yang, Sitong Liu, Wencheng He, Fengzhan Sun, Shubing Bi, Hongge Pan, Lingfeng Zhu, Tianyi Ma, Lei Zhang   +8 more
wiley   +1 more source

Operando Synchrotron X‐Ray Absorption Spectroscopy: A Key Tool for Cathode Material Studies in Next‐Generation Batteries

Advanced Science
Rechargeable batteries are central to modern energy storage systems, from portable electronics to electric vehicles. The cathode material, a critical component, largely dictates a battery's energy density, capacity, and overall performance.
Yameng Fan, Xin Wang, Guyue Bo, Xun Xu, Khay Wai See, Bernt Johannessen, Wei Kong Pang   +6 more
doaj   +1 more source

Iterative Bragg peak removal on X-ray absorption spectra with automatic intensity correction

Journal of Synchrotron Radiation
This study introduces a novel iterative Bragg peak removal with automatic intensity correction (IBR-AIC) methodology for X-ray absorption spectroscopy (XAS), specifically addressing the challenge of Bragg peak interference in the analysis of crystalline ...
Ryuichi Shimogawa, Nicholas Marcella, Christopher R. O'Connor, Taek-Seung Kim, Christian Reece, Igor Lubomirsky, Anatoly I. Frenkel   +6 more
doaj   +1 more source

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

AIP Advances, 2017
We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many ...
Liang Zhao, Xiangdong Ding, Jingjuan Li, Shen Yang, Lei Zhao, Zuoxing Guo   +5 more
doaj   +1 more source

Electronic structures of GaAs/AlxGa1-xAs quantum double

, 2006
In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings(QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ...
Xia JB (Xia Jian-Bai), Li, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail: sslee@red.semi.ac.cn, Li SS (Li Shu-Shen)   +2 more
core  

Engineering CO2 Reduction Pathways via Alloy‐Support Interactions in Li‐CO2 Batteries

Advanced Materials, EarlyView.
Alloy‐support interactions in RuCu/NC induce interfacial charge redistribution and shift d‐band centers, steering CO2 reduction from Li2CO3 to metastable Li2C2O4. This pathway engineering lowers the rate‐determining barrier and suppresses carbonate formation, enabling high discharge voltage (3.23 V) in Li‐CO2 batteries with reduced overpotential (0.50 ...
Liang Sun, Xindan Zhang, Guang Feng, Guoqiang Zhao, Bernt Johannessen, Guanjie Li, Shilin Zhang, Hongge Pan, Zaiping Guo   +8 more
wiley   +1 more source

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Scientific Reports
Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation.
Olga Khvostikova, Alexey Vlasov, Boris Ber, Roman Salii, Vladimir Khvostikov   +4 more
doaj   +1 more source

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Cumhuriyet Science Journal
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj   +1 more source

Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)

, 2001
InAs and InxGa1-xAs (x = 0.2 and 0.5) self-organized quantum dots (QDs) were fabricated on GaAs(0 0 1) by molecular beam epitaxy (MBE) and characterized by atomic force microscopy (AFM), transmission electron microscopy (TEM), acid photoluminescence ...
Lin F,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China., Wu J, Lin F, Cui H, Wang ZG, Jiang WH   +5 more
core