Results 181 to 190 of about 7,096 (220)
Some of the next articles are maybe not open access.

?????????????????? ?? ?????????????????? ?????????????????? ?????????????????? ?? ???????????????????????????? ???????????????? ?????????????????? ?????????? ZnSe ?? ?????????????????????????????? ??????????????

2017
???????????????? ???????????????????? ???????????????????????? ???????????????????? ?????????????? (???????????????????????????? ???????????? ?? ???????????????????? ?????????????? ZnSe), ?????????????? ?????????????????? ?????????????????? ?????????????????????? ?????????????????? ?????????????????????? ???????????????? ?????????????????????????????? ?
openaire   +3 more sources

Relaxation of Trapping Sites in the ZnSe Films of Au-ZnSe-SiO2-Si and Au-ZnSe-Ge Structures

Physica Status Solidi (a), 1989
A thermodepolarization analysis is made of trapping sites in the ZnSe layer of multi-layer AuZnSeSiO2Si and AuZnSeGe structures. A hole trapping site with a cross-section typical of neutral centers, is found. The TS activation energy is found to increase with TS filling, and not to decrease, as is always the case.
S. L. Vinogradov   +2 more
openaire   +1 more source

A case study: Te in ZnSe and Mn-doped ZnSe quantum dots

Nanotechnology, 2011
Photoluminescence (PL) behavior of ZnSe(1-y)Te(y) quantum dots is investigated by varying Te concentration as well as size. The striking effect of quantum confinement is the observation of isoelectronic center-related emission at room temperature in lieu of near-band-edge emission that dominates the optical scenario.
Kiran G, Sonawane   +3 more
openaire   +2 more sources

Cathodoluminescence in heavily-doped ZnSe

35th Intersociety Energy Conversion Engineering Conference and Exhibit, 2000
The present cathodoluminescent investigation of ZnSe single crystals used samples grown by closed-tube thermal diffusion technique. The crystals used had gone through three different stages of treatments. The as-grown ZnSe was doped with 8/spl times/10/sup 18/ cm/sup -3/ iodine concentration during growth, and the as-grown sample received zinc ...
openaire   +1 more source

Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices

Materials Science Forum, 1995
C. Boemare   +4 more
openaire   +1 more source

Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Yuji YAMAGATA   +6 more
openaire   +1 more source

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