Results 181 to 190 of about 15,638 (239)

Epitaxial growth of ZnSe and ZnSe/CdSe nanowires on ZnSe

physica status solidi c, 2010
AbstractWe report the molecular beam epitaxy (MBE) growth of ZnSe nanowires (NWs) on a ZnSe(100) epilayer assisted by gold catalyst. Gold dewetting assists in the formation of nanotrenches along the [0‐1‐1] direction in the ZnSe buffer layer. Nucleation of the gold catalyst in the trenches leads to the growth of NWs preferentially in directions ...
Bellet-Amalric, E., Elouneg-Jamroz, Miryam, Bougerol, C., den Hertog, M., Genuist, Y., Bounouar, S., Poizat, Jean-Philippe, Kheng, K., Andre, R., Tatarenko, S.   +9 more
openaire   +2 more sources

The effect of defect emissions on enhancement photocatalytic performance of ZnSe QDs and ZnSe/rGO nanocomposites

Applied Surface Science, 2018
A systematic study about the origin of defects emission of ZnSe structure was conducted by photoluminescence (PL) spectrometer at room temperature.
Ramin Yousefi, H R Azimi, M R Mahmoudian   +2 more
exaly   +2 more sources

Surface treatment of znse substrate and homoepitaxy of znse

Journal of Electronic Materials, 1997
High quality ZnSe(100) substrates have been used for homoepitaxial growth by molecular beam epitaxy. A chemical pretreatment suitable for ZnSe substrate preparation is determined from x-ray photoemission spectroscopy studies. Thermal cleaning processes for the ZnSe(100) surface were investigated by insitu reflection high energy electron diffraction and
M. W. Cho, K. W. Koh, K. Morikawa, K. Arai, H. D. Jung, Z. Zhu, T. Yao, Y. Okada   +7 more
openaire   +1 more source

Properties of ZnSe-ZnSe0.9Te0.1 and ZnSe-Zn0.9Cd0.1Se multilayers

Journal of Crystal Growth, 1992
Abstract Photoluminescence and electroluminescence were observed from quantum well structures and superlattices composed of ZnSe-ZnSe1−xTex and ZnSe-Zn1−xCdxSe layers. Photopumped stimulated emission was also observed up to temperatures greater than 200 K.
J. Ren, K.A. Bowers, R.P. Vaudo, J.W. Cook, J.F. Schetzina, J. Ding, H. Jeon, A.V. Nurmikko   +7 more
openaire   +1 more source

Photoluminescence de ZnSe: Ga et ZnSe: As

Materials Research Bulletin, 1975
Abstract The photoluminescence emission spectra of crystals of zinc selenide doped with Ga and As have been measured at 4.2°K. The effect of heat treating ZnSe in presence of Zn is investigated too. The more prominent features of the spectra are generally grouped as the so-called I 1 line, the I 2 line and the edge emission.
D. Etienne, G. Bougnot
openaire   +1 more source

Optical properties of ZnSe

Physical Review B, 1991
We have studied the optical response of ZnSe in the 1.5--5.3-eV photon-energy range at room temperature by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at energies of the ${\mathit{E}}_{0}$, ${\mathit{E}}_{0}$+${\mathrm{\ensuremath{\Delta}}}_{0}$, ${\mathit{E}}_{1}$, and ${\mathit{E}}_{1}$+${\mathrm ...
, Adachi, , Taguchi
openaire   +2 more sources

Adiabatic elastic moduli in ZnSe : Mn2+ and ZnSe : V2+ crystals

Physics of the Solid State, 2008
The temperature dependences of the elastic moduli C44 (C11 − C12)/2 and Cl = (C11 + C12 + 2C44)/2 of ZnSe : V2+ (impurity concentration, 6 × 1018 cm−3) and ZnSe : Mn2+ (9.4 × 1020 cm−3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived.
Gudkov, V. V., Lonchakov, A. T., Sokolov, V. I., Zhevstovskikh, I. V., Surikov, V. T.   +4 more
openaire   +3 more sources

Electronic structure and interfacial properties of ZnSe/Si, ZnSe/Ge, and ZnSe/SiGe superlattices

Superlattices and Microstructures, 2005
Abstract The detailed calculations of electronic structures of the (ZnSe)n/(Si2)m, (ZnSe)n/(Ge2)m, and (ZnSe)n/(Si1−xGe1+x)[x(−1,+1)](110) superlattices are performed by a semi-empirical sp3s∗ tight-binding method with a wide range of n , m ⩽ 20 .
A. Laref, B. Belgoumene, H. Aourag, M. Maachou, A. Tadjer   +4 more
openaire   +1 more source

Phosphine-free synthesis of high quality ZnSe, ZnSe/ZnS, and Cu-, Mn-doped ZnSe nanocrystals

Dalton Transactions, 2009
High quality zinc blende ZnSe and ZnSe/ZnS core/shell nanocrystals have been synthesized by two converse injection methods (i.e. zinc precursor injection or selenium precursor injection) when Se-ODE complex was chosen as the phosphine-free selenium precursor.
Huaibin, Shen, Hongzhe, Wang, Xiaomin, Li, Jin Zhong, Niu, Hua, Wang, Xia, Chen, Lin Song, Li   +6 more
openaire   +2 more sources

Growth of ZnSe- and phosphorus-doped ZnSe single crystals

SPIE Proceedings, 2001
ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3.
Sankar Narasimhan, K. Ramachandran, C. Sanjeevi Raja   +2 more
openaire   +1 more source