Results 181 to 190 of about 36,994 (231)

Properties of ZnSe-ZnSe0.9Te0.1 and ZnSe-Zn0.9Cd0.1Se multilayers

Journal of Crystal Growth, 1992
Abstract Photoluminescence and electroluminescence were observed from quantum well structures and superlattices composed of ZnSe-ZnSe1−xTex and ZnSe-Zn1−xCdxSe layers. Photopumped stimulated emission was also observed up to temperatures greater than 200 K.
J. Ren, K.A. Bowers, R.P. Vaudo, J.W. Cook, J.F. Schetzina, J. Ding, H. Jeon, A.V. Nurmikko   +7 more
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Adiabatic elastic moduli in ZnSe : Mn2+ and ZnSe : V2+ crystals

Physics of the Solid State, 2008
The temperature dependences of the elastic moduli C44 (C11 − C12)/2 and Cl = (C11 + C12 + 2C44)/2 of ZnSe : V2+ (impurity concentration, 6 × 1018 cm−3) and ZnSe : Mn2+ (9.4 × 1020 cm−3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived.
Gudkov, V. V., Lonchakov, A. T., Sokolov, V. I., Zhevstovskikh, I. V., Surikov, V. T.   +4 more
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Electronic structure and interfacial properties of ZnSe/Si, ZnSe/Ge, and ZnSe/SiGe superlattices

Superlattices and Microstructures, 2005
Abstract The detailed calculations of electronic structures of the (ZnSe)n/(Si2)m, (ZnSe)n/(Ge2)m, and (ZnSe)n/(Si1−xGe1+x)[x(−1,+1)](110) superlattices are performed by a semi-empirical sp3s∗ tight-binding method with a wide range of n , m ⩽ 20 .
A. Laref, B. Belgoumene, H. Aourag, M. Maachou, A. Tadjer   +4 more
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Optical properties of ZnSe

Physical Review B, 1991
We have studied the optical response of ZnSe in the 1.5--5.3-eV photon-energy range at room temperature by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at energies of the ${\mathit{E}}_{0}$, ${\mathit{E}}_{0}$+${\mathrm{\ensuremath{\Delta}}}_{0}$, ${\mathit{E}}_{1}$, and ${\mathit{E}}_{1}$+${\mathrm ...
, Adachi, , Taguchi
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Study of high-quality ZnSe/GaAs/ZnSe single quantum well and ZnSe/GaAs heterostructures

Journal of Crystal Growth, 1991
Abstract We have used the migration-enhanced epitaxy (MEE) technique to grow high-quality ZnSe/GaAs/ZnSe single quantum well (SQW) structures and ZnSe/GaAs heterostructures. The atomic layer controlled epitaxy of ZnSe-on-GaAs and the question of growth-rate/MEE cycle for ZnSe growth was also investigated.
S. Ramesh, N. Kobayashi, Y. Horikoshi
openaire   +1 more source

Electrodeposition of ZnSe-Fe and ZnSe-Co Granular Films

Electrochemical and Solid-State Letters, 2002
ZnSe-Fe and ZnSe-Co granular films have been successfully obtained by electrodeposition under potentiostatic conditions. Cyclic voltammograms of the solutions containing all precursors of the systems are consistent with anomalous codeposition of the zinc and iron-group metals.
A. R. de Moraes, D. H. Mosca, N. Mattoso, W. H. Schreiner   +3 more
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ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

Materials Science and Engineering: B, 2005
Abstract Homoepitaxial and heteroepitaxial ZnSe metal–semiconductor–metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent.
T.K. Lin, S.J. Chang, Y.K. Su, Y.Z. Chiou, C.K. Wang, S.P. Chang, C.M. Chang, J.J. Tang, B.R. Huang   +8 more
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Synthesis of ZnSe Quantum Dots and ZnSe–ZnS Core/Shell Nanostructures

Journal of Nanoscience and Nanotechnology, 2007
Colloidal ZnSe nanocrystals were synthesized in hot mixtures of long-chain alkylamines, fatty acids, and alkylphosphines. It was possible to tune the size of nanocrystals by varying the reaction time. Transmission electron microscope images showed the presence of spherical ZnSe nanocrystals and X-ray diffraction pattern of ZnSe nanocrystals showed the ...
Ali, Moazzam, Sarma, DD
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Electroluminescence in In-ZnSe: Cu-ZnSe(s)-Au structures

Journal of Luminescence, 1983
Abstract The electroluminescent properties of In-ZnSe: Cu-ZnSe(s)-Au structures have been studied in the temperature range from 27 to 300 K. The spectrum of the forward-biased diodes at 27 K consists of emission lines due to the recombination of bound excitons, an associated donor-acceptor pair band with LO-phonon replicas and a deep level emission ...
W. BaŁ, F. Firszt, H.J. Ł;ożykowski
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Growth of ZnSe- and phosphorus-doped ZnSe single crystals

SPIE Proceedings, 2001
ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3.
Sankar Narasimhan, K. Ramachandran, C. Sanjeevi Raja   +2 more
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