Results 191 to 200 of about 15,638 (239)

High-temperature electron mobility in ZnSe : Al and ZnSe : As

Journal of Applied Physics, 1979
Experimental values of high-temperature Hall mobility in ZnSe : Al and ZnSe : As are compared with theoretical values calculated taking into account lattice scattering and ionized impurity scattering. It is seen that the latter has a marked effect on the mobility up to 1000 °C in samples with dopant concentrations of 5×1017 cm−3.
A. K. Ray, F. A. Kröger
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Electroluminescence in In-ZnSe: Cu-ZnSe(s)-Au structures

Journal of Luminescence, 1983
Abstract The electroluminescent properties of In-ZnSe: Cu-ZnSe(s)-Au structures have been studied in the temperature range from 27 to 300 K. The spectrum of the forward-biased diodes at 27 K consists of emission lines due to the recombination of bound excitons, an associated donor-acceptor pair band with LO-phonon replicas and a deep level emission ...
W. BaŁ, F. Firszt, H.J. Ł;ożykowski
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Electrodeposition of ZnSe-Fe and ZnSe-Co Granular Films

Electrochemical and Solid-State Letters, 2002
ZnSe-Fe and ZnSe-Co granular films have been successfully obtained by electrodeposition under potentiostatic conditions. Cyclic voltammograms of the solutions containing all precursors of the systems are consistent with anomalous codeposition of the zinc and iron-group metals.
A. R. de Moraes, D. H. Mosca, N. Mattoso, W. H. Schreiner   +3 more
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ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

Materials Science and Engineering: B, 2005
Abstract Homoepitaxial and heteroepitaxial ZnSe metal–semiconductor–metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent.
T.K. Lin, S.J. Chang, Y.K. Su, Y.Z. Chiou, C.K. Wang, S.P. Chang, C.M. Chang, J.J. Tang, B.R. Huang   +8 more
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Study of high-quality ZnSe/GaAs/ZnSe single quantum well and ZnSe/GaAs heterostructures

Journal of Crystal Growth, 1991
Abstract We have used the migration-enhanced epitaxy (MEE) technique to grow high-quality ZnSe/GaAs/ZnSe single quantum well (SQW) structures and ZnSe/GaAs heterostructures. The atomic layer controlled epitaxy of ZnSe-on-GaAs and the question of growth-rate/MEE cycle for ZnSe growth was also investigated.
S. Ramesh, N. Kobayashi, Y. Horikoshi
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XAFS of ZnSe

Physica B: Condensed Matter, 1995
Abstract We present an X-ray absorption study of zinc selenide at the Zn and Se K-edges. The analysis of the X-ray absorption fine structure (XAFS) was done in the framework of the multiple-scattering theory. The total XAFS signals have been obtained; they are in good agreement with the experimental data.
D. Diop, R. Grisenti
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ZnSe Semiconductor Hollow Microspheres.

ChemInform, 2003
AbstractFor Abstract see ChemInform Abstract in Full Text.
Qing, Peng, Yajie, Dong, Yadong, Li
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Electrodeposition of ZnSe

Electrochimica Acta, 2008
Abstract The conditions of the electrodeposition of a thin film of polycrystalline ZnSe phase on copper substrate from aqueous baths were studied. The electrochemical behavior of Zn2+ and H2SeO3 species was investigated using cyclic voltammetry.
Remigiusz Kowalik, Piotr Żabiński, Krzysztof Fitzner   +2 more
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2021
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Relaxation of Trapping Sites in the ZnSe Films of Au-ZnSe-SiO₂-Si and Au-ZnSe-Ge Structures

Physica Status Solidi (a), 1989
A thermodepolarization analysis is made of trapping sites in the ZnSe layer of multi-layer AuZnSeSiO2Si and AuZnSeGe structures. A hole trapping site with a cross-section typical of neutral centers, is found. The TS activation energy is found to increase with TS filling, and not to decrease, as is always the case.
S. L. Vinogradov, O. K. Malinovskaya, V. A. Tolokonnikov   +2 more
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