Results 201 to 210 of about 15,638 (239)

A case study: Te in ZnSe and Mn-doped ZnSe quantum dots

Nanotechnology, 2011
Photoluminescence (PL) behavior of ZnSe(1-y)Te(y) quantum dots is investigated by varying Te concentration as well as size. The striking effect of quantum confinement is the observation of isoelectronic center-related emission at room temperature in lieu of near-band-edge emission that dominates the optical scenario.
Kiran G, Sonawane, Ch, Rajesh, Mayur, Temgire, Shailaja, Mahamuni   +3 more
openaire   +2 more sources

Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe

Journal of Electronic Materials, 1997
The work presented in this paper studied the degradation of ZnTe/ZnSe multiquantum well contacts to p-ZnSe under high current loading (1000 to 1500 A/cm2). During degradation, localized heating (up to 200°C > the bulk substrate and heat sink) was observed to occur at the point were electrical power was supplied.
John J. Fijol, Paul H. Holloway
openaire   +1 more source

Growth of high-quality ZnSe by MOVPE on (100) ZnSe substrate

Journal of Crystal Growth, 1988
Single crystalline layers of undoped ZnSe have been on (100) ZnSe substrates by atmospheric pressure MOVPE using dimethylzinc (DMZ) and hydrogen selenide (H2Se). The layers are typically 6 μm thick and the surface morphologies, measured by Nomarski phase contrast interference microscopy, appear superior to those of ZnSe layers grown on GaAs subrates ...
T. Yodo, T. Koyama, K. Yamashita
openaire   +1 more source

Defect studies of ZnSe nanowires

Nanotechnology, 2008
During the synthesis of ZnSe nanowires various point and extended defects can form, leading to observed stacking faults and twinning defects, and strong defect related emission in photoluminescence spectra. In this paper, we report on the development of a simple thermodynamic model for estimating the defect concentration in ZnSe nanowires grown under ...
U, Philipose, Ankur, Saxena, Harry E, Ruda, P J, Simpson, Y Q, Wang, K L, Kavanagh   +5 more
openaire   +2 more sources

X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals

Physics of the Solid State, 2002
The results of experimental studies of the energy spectrum of X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals are presented; the results are in accord with the available calculations. The Stokes shift, the stabilization of the Fermi level near the extrema of allowed bands of ZnSe, anomalies in thermoluminescence and interband photoluminescence, and ...
openaire   +1 more source

Column-V acceptors in ZnSe

Physical Review B, 1993
The structural and electronic properties of substitutional phosphorus and nitrogen impurities in ZnSe are studied using pseudopotential total-energy calculations. Substitutional phosphorus and nitrogen, in their neutral states, form shallow acceptors. In the case of phosphorus, the symmetry is lowered from ${\mathit{T}}_{\mathit{d}}$ to ${\mathit{C}}_ ...
, Kwak, , King-Smith, , Vanderbilt
openaire   +2 more sources

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2017
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openaire   +3 more sources

Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions

Materials Science and Engineering: B, 1998
Abstract A thin (≈200 nm) ZnSe film was grown by molecular beam epitaxy on p-type Si with an InSe buffer layer in between. The InSe buffer (≈25 A) was used to bypass the huge lattice mismatch of 4.4% between ZnSe and Si in order to ensure the growth of stress-free ZnSe.
openaire   +1 more source

ZnSe Nanorods–CsSnCl3 Perovskite Heterojunction Composite for Photocatalytic CO2 Reduction

ACS Nano, 2022
Jin Wang, De-Li Chen, Zhengquan Li
exaly  

Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices

Materials Science Forum, 1995
C. Boemare, Maria Helena Nazaré, W. Taudt, J. Söllner, M. Heuken   +4 more
openaire   +1 more source