Results 61 to 70 of about 36,994 (231)

Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii

, 1998
Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques.
C. Gourgon, D. Wolverson, G. Bacher, H. Mayer, J. Griesche, J. J. Davies, L. S. Dang, M. A. Foad, M. Happ, M. Illing, P. J. Klar, P. J. Klar, P. J. Klar, R. Steffen, T. Henning, W. Heimbrodt, Y. M. Niquet, Z. H. Yu   +17 more
core   +1 more source

Unity Quantum Yield of High‐Entropy Quantum Dots Composited With Photonic Crystals for Information Encryption

Advanced Science, EarlyView.
This study first extends the high‐entropy concept to I‐III‐VI quantum dots (QDs) and synthesizes CZCrGSe/ZnSe/ZnS core/shell/shell QDs with a record photoluminescence quantum yield (PLQY) of 100%. Their ZnSe/ZnS double shell efficiently passivates defects and boosts structural stability.
Maoyuan Huang, Ziqiang Tian, Binkun Xie, Haiyang Li, Bo Tan, Chang He, Shiliang Mei, Wanlu Zhang, Changchun Wang, Ruiqian Guo   +9 more
wiley   +1 more source

Green synthesis and antibacterial activity of zinc selenide (ZnSe) nanoparticles [PDF]

Nanomedicine Journal, 2019
Objective(s): In this study, zinc selenide nanoparticles (ZnSe NPs) were prepared via green synthesis as a simple, fast, and eco-friendly method at an ambient temperature and various reaction pH (11, 12, and 13).
Majid Darroudi, Niloofar KhandaKhandan Nasab, Himen Salimizand, Alireza Dehnad   +3 more
doaj   +1 more source

Spectra Stable Quantum Dots Enabled by Band Engineering for Boosting Electroluminescence in Devices

Micromachines, 2022
The band level landscape in quantum dots is of great significance toward achieving stable and efficient electroluminescent devices. A series of quantum dots with specific emission and band structure of the intermediate layer is designed, including rich ...
Bingbing Lyu, Junxia Hu, Yani Chen, Zhiwei Ma   +3 more
doaj   +1 more source

Effect of shell thickness on exciton and biexciton binding energy of a ZnSe/ZnS core/shell quantum dot

, 2009
The exciton and biexciton binding energy have been studied for a ZnSe/ZnS core/shell quantum dot using WKB (Wentzel-Kramers-Brillouin) approximation.
Andrews, Andrews, Bafna, Banyai, Chadi, Chang, Davies, Dutta, Efros, Ghatak, Goswami, Jacak, Joseph Thomas Andrews, Kim, Kumar, Kumbhojkar, Lad, Marple, Nikesh, Nirmal, Pranay Kumar Sen, Pratima Sen, Saikat Chattopadhyay, Sarkar, Sen, Shahzad, Van de Walle   +26 more
core   +1 more source

Photoluminescence of ZnSe/CdSe/ZnSe Single Quantum Well

Journal of the Korean Vacuum Society, 2007
ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about from the intensities and the full-width at half maximum of photoluminescence(PL) spectra.
J.G. Park, Byung-Sung O, Y.M. Yu, M.Y. Yoon, D.J. Kim, Y.D. Choi   +5 more
openaire   +2 more sources

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source

Electronic structure and optical properties of ZnX (X=O, S, Se, Te)

, 2007
Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches.
A. Kjekshus, B. G. Svensson, H. Fjellvåg, K. Postava, M. Cardona, M. L. Cohen, P. L. Washington, P. Ravindran, R. F. W. Bader, S. H. Vosko, S. Lalitha, S. Zh. Karazhanov, V. N. Tomashik, V. V. Sobolev, W. H. Bragg   +14 more
core   +1 more source

Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates [PDF]

, 2013
The molecular beam epitaxial growth of zinc blende (ZB) MgS on GaAs, GaP, and InP substrates has been investigated by X-ray diffraction and RHEED, with MgS layer strain varying between 3.1% compressive strain (GaP) and 4.4% tensile strain (InP).
Moug, Richard, Prior, Kevin Alan, Rajan, Akhil   +2 more
core   +1 more source

Grenzflächenstabilität und Kinetik von sulfidbasierten Festelektrolyten in Festkörperbatterien

Angewandte Chemie, EarlyView.
Wir zeigen die chemische und elektrochemische Stabilität verschiedener Kathodentypen und Funktionsmaterialien in Kontakt mit sulfidbasierten Festelektrolyten sowie die Rolle geladener Kathodenzustände für Grenzflächenreaktionen und die damit verbundenen Volumenänderungen.
Kangli Wang, Wolfgang G. Zeier, Jürgen Janek, Doreen Mollenhauer   +3 more
wiley   +1 more source