Results 111 to 120 of about 930 (217)

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body [PDF]

open access: green, 2013
Arnab Biswas   +6 more
openalex  

SOI nanodevices and materials for CMOS ULSI, Journal of Telecommunications and Information Technology, 2007, nr 2 [PDF]

open access: yes
A review of recently explored new effects in SOI nanodevices and materials is given. Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are ...
Balestra, Francis
core   +1 more source

Ferroelectric Devices for Content-Addressable Memory. [PDF]

open access: yesNanomaterials (Basel), 2022
Tarkov M   +5 more
europepmc   +1 more source

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]

open access: yesDiscov Nano
Bae SJ   +9 more
europepmc   +1 more source

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