Results 131 to 140 of about 11,706 (260)
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications [PDF]
In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory ...
Yuri Kim +4 more
core +1 more source
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
This study develops a retinal‐inspired optoelectronic sensor based on two‐dimensional γ‐InSe, wherein engineered interlayer sliding enhanced spontaneous polarization. The system utilizes the photo‐pyroelectric effect to simulate the snake's all‐day visual function.
Qingbin Wang +9 more
wiley +1 more source
ABSTRACT Accumulating evidence suggests that paternal environmental factors have epigenetic effects on sperm and influence offspring. Neonicotinoid pesticides (NNs), which are widely used around the world, are known to affect offspring phenotypes through maternal exposure in mice, but the effect of the paternal exposure remains unknown.
Makiko Ito +11 more
wiley +1 more source
Spatial Charge Trap Engineering with Boron Nitride Barrier for 3D V-NAND Flash Memory [PDF]
Spatial charge trap engineering using amorphous boron nitride (BN) energy barrier for 3D V-NAND flash memory device is presented. A 1 nm thick BN layer is inserted within a silicon nitride (SiN) charge trap layer (CTL) using an In-situ ALD process.
Kang, Daehyun +5 more
core
Patient‐derived xenograft (PDX) tumor models initiated in avian chorioallantoic membranes (CAM) are under investigation to evaluate the effectiveness of therapeutic options with the objective of personalizing treatments. CAM PDXs paired with ultra‐high frequency ultrasound (UHFUS) imaging could potentially constitute prospective high throughput assays ...
Sara Mar +5 more
wiley +1 more source
High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory Applications [PDF]
In this paper, we propose a hybrid channel (HC) structure in which the poly-Si and indium gallium oxide (IGO) channels coexist to achieve high mobility and gate-induced-drain-leakage (GIDL) erase-compatible characteristics for 3D NAND flash memory ...
Ji-Ho Song (2716798) +5 more
core +1 more source
Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device
We demonstrate a charge-trap flash (CTF) device with a germanium-incorporated silicon nitride (Ge:SiN) charge-trap layer (CTL). Compared to a conventional SiN CTL, the 6 nm-thick Ge:SiN CTL exhibits increased trap density and deeper trap levels.
Geonhee Shin +4 more
doaj +1 more source
A digitally multiplexed, large‐aperture photoacoustic and ultrasound imaging architecture is presented to overcome the fundamental limited‐view artifact inherent in conventional arrays. By significantly broadening the structural detection coverage, this scalable platform enables high‐fidelity 3D visualization of human extremities within a single ...
Sinyoung Park +8 more
wiley +1 more source
ABSTRACT Purpose To accelerate MRI further, rapid B0 field modulations can be applied during oversampled readout to capture additional physical information, as in Wave‐CAIPI/FRONSAC/local B0 coils modulation techniques. These methods, however, turn the Fourier readout into a non‐Fourier‐encoded dimension that cannot be reconstructed by FFT, posing ...
Rui Tian, Klaus Scheffler
wiley +1 more source

