Results 201 to 210 of about 1,500,059 (236)
Some of the next articles are maybe not open access.

Read Retry Mechanism for 3D NAND Flash Memory: Observations, Analyses, and Solutions

IEEE Non-Volatile Memory System and Applications Symposium
The read retry mechanism is implemented in high-density NAND flash memory to recover data when the default read reference voltage fails to read out the data.
Han-Yu Liao   +3 more
semanticscholar   +1 more source

Introduction to 3D NAND Flash Memories

2022
Rino Micheloni   +2 more
openaire   +1 more source

Some Comprehensive Understanding of 3D-NAND Technology (Invited)

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2018
this paper reviews some recent 3D NAND development based on published work related to its technology, process, devices and reliability.
openaire   +1 more source

Achieving Near-Zero Read Retry for 3D NAND Flash Memory

International Conference on Architectural Support for Programming Languages and Operating Systems
As the flash-based storage devices age with program/erase (P/E) cycles, they require an increasing number of read retries for error correction, which in turn deteriorates their read performance.
Min Ye   +7 more
semanticscholar   +1 more source

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput

IEEE International Solid-State Circuits Conference
With the recent evolution of AI, our digital world, constructed by networks, is advancing rapidly and driving demand for data bandwidth and transfer speed everywhere from mobiles to data centers, regardless of form factor.
K. Kawai   +32 more
semanticscholar   +1 more source

Carbon Plug Application in 3D NAND Fabrication

2022 IEEE International Interconnect Technology Conference (IITC), 2022
Yu-Chih Chang   +6 more
openaire   +1 more source

Extending SSD Lifetime via Balancing Layer Endurance in 3D NAND Flash Memory

Design, Automation and Test in Europe
By stacking layers vertically, 3D flash memory enables continuous growth in capacity. In this paper, we study the layer variation in 3D flash blocks and find that bottom layer pages exhibit the lowest endurance, whereas middle layer pages demonstrate the
Siyi Huang, Yajuan Du, Yi Fan, Cheng Ji
semanticscholar   +1 more source

Error Generation for 3D NAND Flash Memory

2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022
Weihua Liu   +4 more
openaire   +1 more source

3D NAND Scaling in the next decade

2022 International Electron Devices Meeting (IEDM), 2022
Russ Meyer   +2 more
openaire   +1 more source

Home - About - Disclaimer - Privacy