Results 1 to 10 of about 89 (89)

Spin-acoustic control of silicon vacancies in 4H silicon carbide

Nature Electronics, 2023
AbstractBulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as the surface information available through laser Doppler vibrometry lacks information about the acoustic energy stored in the bulk ...
Jonathan R. Dietz, Boyang Jiang, Aaron M. Day, Sunil A. Bhave, Evelyn L. Hu   +4 more
openaire   +3 more sources

Impact ionization coefficients of 4H silicon carbide [PDF]

Applied Physics Letters, 2004
Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (112¯0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to ...
T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, N. Sano   +5 more
openaire   +1 more source

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
openaire   +2 more sources

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes [PDF]

IEEE Transactions on Industry Applications, 2019
Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality.
Anastasios E. Arvanitopoulos, Marina Antoniou, Samuel Perkins, Mike Jennings, Manuel Belanche Guadas, Konstantinos N. Gyftakis, Neophytos Lophitis   +6 more
openaire   +4 more sources

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas [PDF]

Materials Science Forum, 2008
The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate.
Hitoshi Habuka, Yusuke Katsumi, Yutaka Miura, Keiko Tanaka, Yasushi Fukai, Takaya Fukae, Yuan Gao, Tomohisa Kato, Hajime Okumura, Kazuo Arai   +9 more
openaire   +1 more source

Porous single crystalline 4H silicon carbide rugate mirrors [PDF]

APL Materials, 2017
Porous 4H silicon carbide optical rugate mirrors have been fabricated with a combination of metal assisted photochemical etching and photoelectrochemical etching. The degree of porosity was controlled by the applied voltage, while the etching depth was controlled by measuring the transferred charge.
Markus Leitgeb, Christopher Zellner, Michael Schneider, Ulrich Schmid   +3 more
openaire   +2 more sources

Immune and Stem Cell‐Mediated Bactericidal Amplification and Bone Remodeling for Infection Clearance and Osteointegration

Advanced Materials, EarlyView.
A pH‐responsive biomaterial interface integrates bactericidal peptides, cell‐recruiting peptides, and magnesium ions into a multifunctional system. Infection‐induced acidification triggers antimicrobial peptide release while cell‐recruiting peptides mobilize bone marrow stem cells.
Zhenyu Li, Siming Zhang, Jiale Dong, Ning Li, Mo Chen, Kunzheng Wang, Bin Li, Guoqing Pan, Jiaxiang Bai, Chen Zhu   +9 more
wiley   +1 more source

Absorption‐Dominant Electromagnetic Interference Shielding of Ti3C2Tx MXene‐Coated and Fe3O4‐Integrated TPMS Composites with Coupled Gradient Conductivity and Size‐Graded Structure

Advanced Science, EarlyView.
A functionally driven variable‐cell size and gradient‐conductive coated TPMS structure was developed. Accordingly, stepwise longitudinal gradient impedance was realized, achieving absorption‐dominant EMI shielding (absorptivity≈0.85) with an EMI SET of ≈ 59 dB, for 10 mm‐thick composites. Further increasing the thickness of composites to 20 mm achieved
Abdallah Kamal, Baosong Li, Dawei Zhang, Muhammad Mujtaba Syed, Adam Otabil, Faisal Shahzad, Lianxi Zheng, Kin Liao   +7 more
wiley   +1 more source

Review: Insight on Porous Carbon Positive Electrode for Sodium‐Ion Capacitors: Interplay Between Synthesis, Properties, and Performance

Advanced Science, EarlyView.
Sodium ion capacitor (SIC) is currently constrained by the low discharge capacity of commercial activated carbon as positive electrode material. This review provides a holistic summary of research efforts on alternative porous carbon materials for SIC. Image created by the authors with www.biorender.com.
Ademola Adeniji, Adrian Beda, Camélia Matei Ghimbeu   +2 more
wiley   +1 more source

Metal assisted photochemical etching of 4H silicon carbide

Journal of Physics D: Applied Physics, 2017
Abstract Metal assisted photochemical etching (MAPCE) of 4H–silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to
Markus Leitgeb, Christopher Zellner, Michael Schneider, Stefan Schwab, Herbert Hutter, Ulrich Schmid   +5 more
openaire   +1 more source