Results 21 to 30 of about 89 (89)

First‐Principles Investigation of Surface‐Induced Effects on the Properties of Divacancy Qubits in 3C‐SiC

physica status solidi (b), Volume 263, Issue 3, March 2026.
Near‐surface divacancy defects in cubic silicon carbide exhibit modified properties due to surface‐induced symmetry breaking, as revealed by first‐principles calculations. The spin Hamiltonian is modulated by the defect's depth and orientation, providing key insights for engineering robust SiC‐based quantum devices and nanoscale sensors.
Rosario G. Viglione, Giovanni Castorina, Gaetano Calogero, Giuseppe Fisicaro, Damiano Ricciarelli, Ioannis Deretzis, Antonino La Magna   +6 more
wiley   +1 more source

1D and 3D Carbon Nanomaterials Derived from Zeolite‐Based Catalysts: Synthesis and Applications

Small Structures, Volume 7, Issue 3, March 2026.
Zeolites act as catalysts or catalytic templates to synthesize 1D and 3D carbon nanomaterials with uniform structures, enabled by their high surface area and uniform porous frameworks. The resulting carbon nanomaterials possess excellent surface area and electronic conductivity, supporting their use in energy storage, catalysis, electronics, gas ...
Kulika Pithaksinsakul, Peeranat Chaipornchalerm, Sareeya Bureekaew, Chularat Wattanakit   +3 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, Volume 12, Issue 4, 18 February 2026.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

2D Nanomaterials for Solar Hydrogen Production

Advanced Energy and Sustainability Research, Volume 7, Issue 2, February 2026.
This review gives comprehensively summarized latest advances on solar H2 production by various 2D nanomaterials using photocatalytic and photoelectrocatalytic H2 production methods, especially highlighting the photocatalytic one. After the summary, an outlook into the challenges and the future of 2D nanomaterials for solar H2 production is given.
Pengfei Cheng, Honglei Wang, Bo Wu, Guofu Zhou, Dong Wang, Peter Schaaf   +5 more
wiley   +1 more source

Recent Advances and Opportunities in Nanomaterial‐Based Absorption‐Dominant High Green Index Electromagnetic Interference Shields

Small Structures, Volume 7, Issue 2, February 2026.
An in‐depth review of the nanomaterial‐based electromagnetic interference shields, which are absorption‐dominant and have a high green index. The design strategies of absorption‐dominant shields are analyzed, and current challenges and potential pathways to guide future advancements and practical implementation are outlined.
Sanjoy Sur Roy, Koushik Ghosh, M. Meyyappan, P. K. Giri   +3 more
wiley   +1 more source

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

Advanced Materials, Volume 38, Issue 6, 27 January 2026.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker, Bohan Xu, Chengye Dong, Michael Labella III, Nadire Nayir, Natalya Sheremetyeva, Zachary J. Trdinich, Duanchen Zhang, Gokay Adabasi, Bita Pourbahari, Li‐Syuan Lu, Wesley E. Auker, Ke Wang, Mehmet Baykara, Vincent Meunier, Nabil Bassim, Adri C. T. van Duin, Vincent H. Crespi, Joshua A. Robinson   +18 more
wiley   +1 more source

Advanced Functional Materials Research: Paving the Way for Technological Innovation and Beyond

Small, Volume 22, Issue 12, 25 February 2026.
Huaping Zhao, Yong Lei
wiley   +1 more source

4H-silicon carbide modified-anode gate turn-offthyristor

Electronics Letters, 2000
Drift-diffusion model simulations of a pn-pn-pn type silicon carbide modified-anode gate turn-off (MA-GTO) thyristor structure indicate that the addition of thin n-p layers below the p-type anode region assists hole injection into the drift region of the thyristor. This allows current crowding to be avoided by increasing the dopant concentration of the
openaire   +1 more source

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

, 2019
Secure transmission of information is a crucial element nowadays for industry and national security. Today, the only known way to establish provably secure communication is based on quantum key distribution in a quantum network. Currently, transmission rates and communication distances are limited by (unavoidable) optical loss in fibers and the ...
openaire   +3 more sources

Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

, 2015
The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. The achievement of producing bulk cubic silicon carbide will have a great impact in various fields of science and industry such as for example the fields of ...
openaire   +1 more source