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Impact ionization coefficients of 4H silicon carbide
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Dislocations in 4H silicon carbide
Journal of Physics D: Applied Physics, 2022Abstract Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for applications in electrical vehicles, 5G communications, and new-energy systems.
Jiajun Li +9 more
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Impurities and defects in 4H silicon carbide
Applied Physics Letters, 2023The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon development of the world. Quantum technologies are also intensively explored by scrutinizing 4H-SiC as a platform for wafer-scale integration of semiconductor and quantum ...
Rong Wang +3 more
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Physica B: Condensed Matter, 2001
We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects.
J.P. Bergman +5 more
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We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects.
J.P. Bergman +5 more
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Physica B: Condensed Matter, 2009
Data for low-field muon spin rotation spectra for 4H-SiC is presented for a wide temperature range from 10 to 1400 K. At low temperatures, dependence of amplitude transitions for all the samples show carrier capture processes. For p-type sample in the intermediate temperature region transition energies imply both donor and acceptor ionizations.
Y.G. Celebi +4 more
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Data for low-field muon spin rotation spectra for 4H-SiC is presented for a wide temperature range from 10 to 1400 K. At low temperatures, dependence of amplitude transitions for all the samples show carrier capture processes. For p-type sample in the intermediate temperature region transition energies imply both donor and acceptor ionizations.
Y.G. Celebi +4 more
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Phosphorus implantation into 4H-silicon carbide
Journal of Electronic Materials, 2000Sheet resistances in nitrogen- and phosphorus-implanted 4H-SiC are measured to assess the time and temperature dependencies of this variable. In 4H-SiC implanted with 3 × 1015 cm−2 nitrogen ions to a depth of 2800 A, the minimum sheet resistance observed is 534 Ω/□.
M. A. Capano +4 more
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4H-Silicon Carbide as an Acoustic Material for MEMS
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2023This article discusses the potential of 4H-silicon carbide (SiC) as a superior acoustic material for microelectromechanical systems (MEMS), particularly for high-performance resonator and extreme environments applications. Through a comparison of the crystalline structure along with the mechanical, acoustic, electrical, and thermal properties of 4H ...
Yaoyao Long, Zhenming Liu, Farrokh Ayazi
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Muonium transitions in 4H silicon carbide
Physica B: Condensed Matter, 2009Preliminary low-field data on the diamagnetic muon spin rotation signal in 4H-SiC are presented. The initial results on all three electrical types of 4H-SiC are compared with those for the 6H polytype. Analysis of amplitude transitions at low temperatures in n- and p-type samples indicates carrier capture.
Y.G. Celebi +7 more
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Vanadium-related Center in 4H Silicon Carbide
Materials Science Forum, 2000The V4+ (3d(1)) center in 4H SiC is investigated using photoluminescence (PL) and photoluminescence excitation (PLE). The energy position of the ground state of the defect is determined to be 2.1 +/- 0.1 eV below the conduction band for both the hexagonal and the quasi-cubic site.
Björn Magnusson +3 more
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