Results 41 to 50 of about 89 (89)

Defect structure of 4H silicon carbide ingots

Journal of Crystal Growth, 2011
Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been analyzed.
A.O. Lebedev, D.D. Avrov, A.V. Bulatov, S.I. Dorozhkin, Yu.M. Tairov, A.Yu. Fadeev   +5 more
openaire   +1 more source

Dislocation nucleation in 4H silicon carbide epitaxy

Journal of Crystal Growth, 2004
Abstract The dislocation nucleation during 4H silicon carbide homoepitaxy has been investigated using chemical etching, optical microscopy, atomic force microscopy, and transmission electron microscopy. Threading edge dislocations formed characteristic arrays of etch pit pairs on the epilayer surface, perpendicular to the off-cut direction.
S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski   +3 more
openaire   +1 more source

Dislocation conversion in 4H silicon carbide epitaxy

Journal of Crystal Growth, 2002
Abstract The propagation of basal plane dislocations from off-axis 4H silicon carbide substrates into the homo-epitaxial layers has been investigated using chemical etching, optical microscopy, and transmission electron microscopy (TEM). The etch pit densities of threading edge and basal plane dislocations changed significantly across the epilayer ...
S. Ha, P. Mieszkowski, M. Skowronski, L.B. Rowland   +3 more
openaire   +1 more source

Low frequency noise in 4H silicon carbide

Journal of Applied Physics, 1997
The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α⩽5×
M. E. Levinshtein, S. L. Rumyantsev, J. W. Palmour, D. B. Slater   +3 more
openaire   +1 more source

Defects In 4H Silicon Carbide CVD Epilayers

MRS Proceedings, 1996
AbstractThe characteristic defects of 4H-SiC homoepitaxial thin films grown on bulk substrates using chemical vapor deposition (CVD) are described based on transmission electron microscopy (TEM), atomic force microscopy (AFM) and surface decoration studies. Emphasis is placed on understanding the formation mechanism of surface triangular defects. Cross-
L. Zhou, P. Pirouz, J. A. Powell
openaire   +1 more source

Annealing of Al implanted 4H silicon carbide

Physica Scripta, 2006
Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3).
A Hallén, A Suchodolskis, J Österman, L Abtin, M Linnarsson   +4 more
openaire   +1 more source

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

Nano Letters
The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types.
Yongzhou Xue, Michael Titze, John Mack, Zhaohui Yang, Liang Zhang, Shei S. Su, Zheshen Zhang, Linran Fan   +7 more
openaire   +2 more sources

Charge Sheet Super Junction in 4H-Silicon Carbide

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020
SuperJunctions (SJs) have long been realized in Si. However, their fabrication in 4H-Silicon Carbide (SiC) has been problematic because of poor control of the p-dopant activation efficiency in SiC. We propose that this problem related to SiC material be overcome using a version of SJ called Charge Sheet SJ (CSSJ) which we proposed in the context of Si ...
K. Akshay, M. G. Jaikumar, Shreepad Karmalkar   +2 more
openaire   +1 more source

Radiation-induced defect centers in 4H silicon carbide

Diamond and Related Materials, 1997
Abstract Deep level transient spectroscopy (DLTS) and low temperature photoluminescence (LTPL) were applied to investigate radiation-induced defect centers and their thermal stability in 4H silicon carbide (SiC) epilayers grown by chemical vapor deposition (CVD).
Thomas Dalibor, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Shankar Sridhara, Robert P. Devaty, Wolfgang J. Choyke   +6 more
openaire   +1 more source

Four-point probe characterization of 4H silicon carbide

Solid-State Electronics, 2011
Abstract We report on four-point probe measurements on SiC wafers as such measurements give erratic data. Current–voltage measurements on n-type SiC wafers doped to 3 × 10 18  cm −3 are non-linear and single probe I – V measurements are symmetrical for positive and negative voltages.
N. Chandra, V. Sharma, G.Y. Chung, D.K. Schroder   +3 more
openaire   +1 more source