Results 61 to 70 of about 89 (89)
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Dopant ion implantation simulations in 4H-Silicon Carbide
Modelling and Simulation in Materials Science and Engineering, 2004Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped device structures. In some cases, implanted structures are used as an adjunct to standard commercial processes of thermal diffusion. The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology ...
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Hexagonal Silicon Carbide (2H-, 4H-, and 6H-SiC)
1999Of all the poly types, 6H is by far the most commonly occurring modification in commercial SiC. The next most common polytypes are 15R and 4H, respectively. SiC also crystallizes in the wurtzite structure (2H-SiC). Assuming that the 3C and 2H structures are extremes in the parameter describing the percentage of hexagonal close packing (often called ...
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Design and fabrication of 4H silicon carbide MOSFETS
2009The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems.
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Temperature Dependent Piezoresistive Coefficients of 4h Silicon Carbide
2021Richard Jaeger +2 more
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Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Materials Science Forum, 2002G.J. Phelps +8 more
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MEMS Thermocouple Sensor Based on 4H-Silicon-Carbide-On-Insulator (4H-SiCOI)
IEEE Sensors Journal, 2022Yudong Lv +5 more
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Oxygen-Related Defect Centers in 4H Silicon Carbide
Materials Science Forum, 1998T. Dalibor +8 more
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