Results 101 to 110 of about 36,563 (205)

Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique

Photonics, 2019
We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering.
Ngoc Linh Tran, Giorgio Biasiol, Arnaud Jollivet, Alberto Bertocci, François H. Julien, Jean-Michel Manceau, Raffaele Colombelli   +6 more
doaj   +1 more source

Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor

Active and Passive Electronic Components, 2001
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities.
K. F. Yarn, K. H. Ho
doaj   +1 more source

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals, 2019
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Maxim A. Ladugin, Irina V. Yarotskaya, Timur A. Bagaev, Konstantin Yu. Telegin, Andrey Yu. Andreev, Ivan I. Zasavitskii, Anatoliy A. Padalitsa, Alexander A. Marmalyuk   +7 more
doaj   +1 more source

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

IEEE Journal of the Electron Devices Society, 2017
InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method.
Zhongliang Qiao, Xiaohong Tang, Xiang Li, Baoxue Bo, Xin Gao, Yi Qu, Chongyang Liu, Hong Wang   +7 more
doaj   +1 more source

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

, 2007
A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity.
Abstreiter, G., Bichler, M., Dasgupta, S., Grayson, M., Knaak, C., Morral, A. Fontcuberta i, Moser, J., Roth, S. F.   +7 more
core   +1 more source

Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature

Applied Physics Express
Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers.
Satoshi Iba, Yuzo Ohno
doaj   +1 more source

Resistivity peak values at transition between fractional quantum Hall states

, 2008
Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretical predictions.
A. G. Davies, A. M. Dykhne, A. P. Mills Jr., B. P. Dolan, B. P. Dolan, D. Shahar, H. C. Manoharan, H. Cho, I. M. Ruzin, I. Ruzin, J. K. Wang, J. K. Wang, L. W. Engle, M. Hilke, P. J. Rodgers, R. G. Clark, R. G. Clark, S. Koch, S. S. Murzin, T. Sajoto   +19 more
core   +1 more source

Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

Acta Physica Polonica A, 2008
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al0:2Ga0:8As=GaAs=Al0:2Ga0:8As high electron mobility transistor ...
J. Požela,, K. Požela,, A. Sužiedėlis,, V. Jucienė,, V. Petkun   +4 more
openaire   +1 more source

Magnetic Toroidal Dipole Resonances for Efficient THz Generation in Dielectric Metasurfaces

IEEE Photonics Journal
Nonlinear dielectric metasurfaces represent a rapidly advancing family of optical devices characterized by high nonlinear conversion efficiency with an ultrathin form factor.
Davide Rocco, Olga Sergaeva, Luca Carletti, Andrea Tognazzi, Paolo Franceschini, Alfonso Carmelo Cino, Andrea Locatelli, Costantino De Angelis   +7 more
doaj   +1 more source

Nanometer-scale sharpness in corner-overgrown heterostructures

, 2008
A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width.
Abstreiter, G., Bichler, M., Cantwell, P., Grayson, M., Morral, A. Fontcuberta i, Stach, E., Steinke, L., Zakharov, D., Zaluzec, N. J.   +8 more
core   +1 more source