Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As
, 2013 Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ ...
Chen, Lin +8 more
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Spin characterization and control over the regime of radiation-induced zero-resistance states
, 2004 Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic ...
Mani, R. G.
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GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктуры для мощных полупроводниковых инфракрасных излучателей
Журнал технической физики, 2021 Определен внутренний квантовый выход люминесценции GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктур для инфракрасных светодиодов. Исследовано влияние ростовых условий гетероструктур, выращенных методом молекулярно-лучевой эпитаксии и пост-ростового отжига на квантовый выход гетероструктур.
openaire +2 more sources
Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
AIP AdvancesWe demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction.
Takuya Kawazu
doaj +1 more source
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
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Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures
, 2010 We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility.
C Rössler +7 more
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A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
, 2013 We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential ...
Aagesen, M. +5 more
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, 2002 We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature.
Hanbicki, Aubrey T. +4 more
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Intersubband transitions in pseudomorphic InGaAs/GaAs/AlGaAs multiple step quantum wells [PDF]
, 1993 Intersubband transitions from the ground state to the first and second excited states in pseudomorphic AlGaAs/InGaAs/GaAs/AlGaAs multiple step quantum wells have been observed.
Chen, Y. W. +3 more
core
Influence of Barrier Width on QWIP Operating Voltage
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. Quantum well infrared photodetectors (QWIP) are characterized by a wide application range. A large market demand for such photodetectors determines the importance of elucidating the principle of their operation.Aim.
L. S. Bogoslovskaya +2 more
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