Results 171 to 180 of about 36,563 (205)

Sb₂S₃/AlGaAs-based reconfigurable metasurface for dynamic polarization and directionality control of quantum emitter emission. [PDF]

RSC Adv
Karim ME, Choudhury SM.
europepmc   +1 more source

Bidirectional nuclear polarization through electric dipole spin resonance enabled by spin-orbit interaction in a single hole planar quantum dot device. [PDF]

npj Quantum Inf
Studenikin S, Ducatel J, Ellis O, Korkusinski M, Bogan A, Zawadzki P, Austing DG, Sachrajda A.   +7 more
europepmc   +1 more source

Theoretical and experimental investigations on the performance of broad-sense quantum-well superluminescent diodes based on the concept of energy level divergence. [PDF]

Discov Nano
Wu D, Ren X, Li P, Liu H, Wang Q, Huang Y.   +5 more
europepmc   +1 more source

Giant ultrafast dichroism and birefringence with active nonlocal metasurfaces. [PDF]

Light Sci Appl
Crotti G, Akturk M, Schirato A, Vinel V, Trifonov AA, Buchvarov IC, Neshev DN, Proietti Zaccaria R, Laporta P, Lemaître A, Leo G, Cerullo G, Maiuri M, Della Valle G.   +13 more
europepmc   +1 more source

Design and modeling of eye-shaped double-slot GaAs microring resonator for CO₂ sensing. [PDF]

Sci Rep
Pakfetrat F, Bahadoran M, Dabagh S, Chiavaioli F.   +3 more
europepmc   +1 more source

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Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors

IEEE Transactions on Electron Devices, 1989
The intrinsic switching characteristics of tunneling hot electron transfer amplifier (THETA) devices has been simulated using a time-dependent ensemble Monte Carlo method. Results which show that there is no significant difference between the switch-on and switch-off times of THETA devices and that these switching times are always larger than the ...
M. Kuzuhara, K. Kim, K. Hess
openaire   +1 more source

Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures

Physical Review Letters, 1993
The theory of inelastic electron resonant tunneling through a double-barrier nanostructure is extended to establish a theory of phonon-assisted resonant magnetotunneling when a magnetic field is applied parallel to the tunneling current. At higher temperatures we have discovered an interesting characteristic oscillation of the width and height of the ...
, Zou, , Chao, , Galperin
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GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations

IEEE Transactions on Electron Devices, 1986
Although MODFET's have exhibited the fastest switching speed for any digital circuit technology, there is as yet no clear consensus on optimal inverter design rules. We therefore have developed a comprehensive MODFET device model that accurately accounts for such high gate bias effects as transconductance degradation and increased gate capacitance. The
A.A. Ketterson, H. Morkoc
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GaAs/AlGaAs-Quantenkaskaden-Laser (GaAs/AlGaAs Quantum Cascade Lasers)

tm - Technisches Messen, 2005
Abstract Es wurden Quantenkaskaden-Laser für den 10-μm-Spektralbereich hergestellt. Zur Miniaturisierung, Verbesserung der Bauelementeigenschaften und Erzielung monomodiger Emission wurden Laser mit eindimensionalen photonischen Kristallstrukturen in Form von tiefgeätzten Bragg-Spiegeln entwickelt.
Sven Höfling, Johann P. Reithmaier, Alfred Forchel   +2 more
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Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well

Semiconductors, 2002
An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin
V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, V. Juciene   +4 more
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