Wurtzite AlGaAs Nanowires [PDF]
Scientific Reports, 2020 AbstractSemiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs.
Leandro, L. +8 more
openaire +3 more sources
MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire
Journal of Physics: Conference Series, 2021 AbstractHeterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1peak corresponded to hexagonal phases of germanium.
A N Terpitskiy +4 more
openaire +1 more source
GaAs/AlGaAs Nanowire Photodetector [PDF]
Nano Letters, 2014 We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor ...
Dai, Xing +7 more
openaire +4 more sources
Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering [PDF]
ITM Web of Conferences, 2019 A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented.
Vetrova Natalia +6 more
doaj +1 more source
Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors [PDF]
, 2015 Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise.
Adhikari, Rana X +9 more
core +2 more sources
Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities [PDF]
, 2006 The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band.
Hennessy, K. +7 more
core +2 more sources
Performance limitations of GaAs/AlGaAs infrared superlattices [PDF]
, 1989 The performance of the GaAs/AlGaAs superlattice as an infrared detecting material is modeled as a function of temperature for two cutoff wavelengths, namely, 8.3 and 10.0 µm.
Kinch, M. A., Yariv, A.
core +1 more source
HETEROSTRUCTURE-BASED DIODE WITH THE CATHODE STATIC DOMAIN [PDF]
Радиофизика и электроника, 2015 The sources of noise in the microwave and mm-cm bands with high noise power spectral density have a number of important applications, including communications, automotive location and radiomeasurement.
O. V. Botsula, К. H. Prykhodko
doaj +1 more source
Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis [PDF]
ITM Web of Conferences, 2019 At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon.
Volcheck Vladislav, Stempitsky Viktor
doaj +1 more source
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry, 2020 The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of ...
Nian Jiang +7 more
doaj +1 more source