Results 21 to 30 of about 36,563 (205)
Soliton-emitting AlGaAs waveguide
Optics Express, 1998 Simulations of soliton emission and propagation in a linear AlGaAs waveguide with one nonlinear cladding are presented. The device, which has realistic parameters, operates below half the bandgap and emits light into the cladding for a given input power.
P, Dumais +3 more
openaire +2 more sources
Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates [PDF]
The Journal of Physical Chemistry C, 2021 Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with ...
Boras, Giorgos +12 more
openaire +6 more sources
Role of the substrate in monolithic AlGaAs nonlinear nanoantennas
Nanophotonics, 2017 We report the effect of the aluminum oxide substrate on the emission of monolithic AlGaAs-on-insulator nonlinear nanoantennas. By coupling nonlinear optical measurements with electron diffraction and microscopy observations, we find that the oxidation ...
Gili Valerio Flavio +12 more
doaj +1 more source
Scientific Reports, 2022 A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed.
Syam Madhusoodhanan +7 more
doaj +1 more source
AlGaAs-On-Insulator Nonlinear Photonics [PDF]
, 2015 The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement.
Ottaviano, Luisa +3 more
core +2 more sources
Study on the high-power semi-insulating GaAs PCSS with quantum well structure
AIP Advances, 2016 A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been ...
Chongbiao Luan +5 more
doaj +1 more source
Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014 The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv +4 more
doaj +1 more source
Фізика і хімія твердого тілаNew research has discovered discrepancies in the melting points, plasma generation, and resulting changes in optoelectronic properties of semiconductor materials A2B6 and A3B5 when exposed to laser light, even when the experimental conditions are the ...
S. Levytskyi, Z. Cao, О. Koba, М. Koba
doaj +1 more source
Data in Brief, 2017 The dataset of physical properties for the proposed CIGS solar cell with Cd-free AlGaAs buffer layer has been depicted in this data article. The cell performance outcome due to different AlGaAs buffer layer band gap is reported along with optimum solar ...
Sadia Islam Shachi, Ali Newaz Bahar
doaj +1 more source
Nonlinear electron transport in normally pinched-off quantum wire
, 2000 Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain
Brown R. J. +17 more
core +1 more source