Results 11 to 20 of about 88,613 (352)
Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect
IEEE Journal of the Electron Devices Society, 2020 A SiC trench MOSFET with an enhanced vertical RESURF effect is proposed and analyzed in this article. The device features a deep oxide trench surrounded by a P-type doping layer at the source-side. With the assistant depletion effect of the P-type layer,
Han Yang +4 more
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Open-ended evolution to discover analogue circuits for beyond conventional applications [PDF]
, 2012 Analogue circuits synthesised by means of open-ended evolutionary algorithms often have unconventional designs. However, these circuits are typically highly compact, and the general nature of the evolutionary search methodology allows such designs to be ...
Kalganova, TG
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IEEE Access, 2019 The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu +7 more
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Electronics Letters, 2023 The fully passive noise shaping (NS) successive approximation register (SAR) analog‐to‐digital converters (ADCs) are simple, operational transconductance amplifier (OTA) free and scaling friendly. Previous passive NS‐SAR ADCs rely on the multi‐path‐input
Xingshuai Zou, Jiaxin Liu, Qiang Li
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Yield improvement using configurable analogue transistors (CATs) [PDF]
, 2008 Continued process scaling has led to significant yield and reliability challenges for today’s designers. Analogue circuits are particularly susceptible to poor variation, driving the need for new yield resilient techniques in this area.
Bernstein +5 more
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Electronics Letters, 1994 A new analogue median circuit with a very sharp DC transfer characteristic is described. The configuration is based on a multiple-input current comparator and can be generalised to other rank extractors. A prototype has been fabricated in a 2 µm CMOS technology, and experimental results are presented.
I.E. Opris, G.T.A. Kovacs
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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
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Sensors, 2014 It is difficult for structural over-complete dictionaries such as the Gabor function and discriminative over-complete dictionary, which are learned offline and classified manually, to represent natural images with the goal of ideal sparseness and to ...
Zheng-Zhou Li +7 more
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An expandable 36‐channel neural recording ASIC with modular digital pixel design technique
Electronics Letters, 2023 This paper presents the design and implementation of an expandable neural recording ASIC for multiple‐channel neural recording applications. The ASIC consists of 36 modular digital pixels (MDPs) and a global digital controller (GDC) circuit. Each MDP has
Quan Wang +8 more
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Multiplexing architecture for mixed-signal CMOS fuzzy controllers [PDF]
, 1998 Limited precision imposes limits on the complexity of analogue circuits, and hence fuzzy analogue controllers are usually oriented to fast low-power systems with low-medium complexity.
Navas González, Rafael +2 more
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